Study on energy level bending at heterojunction of solution-processed phthalocyanine thin film and n-Si by Kelvin probe force microscopy

Ryo Ishiura, Akihiko Fujii, Makoto Arita, Koichi Sudoh, Masanori Ozaki

    研究成果: ジャーナルへの寄稿学術誌査読

    1 被引用数 (Scopus)

    抄録

    Surface potential of a solution-processed thin film of an organic semiconductor, 1,4,8,11,15,18,22,25-octahexylphthalocyanine (C6PcH2), on n-type silicon (n-Si) substrate has been studied by using Kelvin probe force microscopy, and discussed the interface properties of organic/inorganic semiconductors. The molecular step and terrace structure was observed on the surface of solution-processed C6PcH2 thin film as a feature of the crystallites composed of C6PcH2 columns lying on the substrate. The surface potential changed depending on the distance from the interface, and exceeded 0.4 eV, which indicated the difference of Fermi levels between C6PcH2 and n-Si. The linear and non-linear relationships between the surface potential and the distance from the interface were discussed by taking the vacuum level shift and impurity carriers into consideration.

    本文言語英語
    論文番号105599
    ジャーナルOrganic Electronics
    78
    DOI
    出版ステータス出版済み - 3月 2020

    All Science Journal Classification (ASJC) codes

    • 電子材料、光学材料、および磁性材料
    • 生体材料
    • 化学 (全般)
    • 凝縮系物理学
    • 材料化学
    • 電子工学および電気工学

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