抄録
Chemical mechanical polishing (CMP) is a key process used for the multilayer copper interconnects. In recent years, the most common problem encountered in this regard is the inability of conventional abrasive grains to adapt to the next-generation semiconductors owing to their large particle sizes. Hence, this study proposes a water-soluble fullerenol (C6o(OH) 36) as a novel abrasive grain for Cu-CMP because of its advantageous features such as high water solubility and uniformity of particle size (1 nm); further, there is no risk of contamination of the metal when using C 6o(OH)36). In this paper, the excellent grain abrasive properties of C6o(OH)36) and its chemical affinity for copper are reported. It is experimentally confirmed that owing to its high chemical reactivity, a slurry containing C6o(OH)36) can be used to improve the rms surface roughness from 20 to 0.5 nm.
元の言語 | 英語 |
---|---|
ページ(範囲) | 489-495 |
ページ数 | 7 |
ジャーナル | Seimitsu Kogaku Kaishi/Journal of the Japan Society for Precision Engineering |
巻 | 75 |
発行部数 | 4 |
DOI | |
出版物ステータス | 出版済み - 1 1 2009 |
外部発表 | Yes |
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All Science Journal Classification (ASJC) codes
- Mechanical Engineering
これを引用
Study on the copper-chemical mechanical polishing method using water-soluble fullerenol slurry -investigation of polishing performance. / Tachika, Hideyuki; Takaya, Yasuhiro; Hayashi, Terutake; Tanada, Hiroki; Kokubo, Ken; Suzuki, Keisuke.
:: Seimitsu Kogaku Kaishi/Journal of the Japan Society for Precision Engineering, 巻 75, 番号 4, 01.01.2009, p. 489-495.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - Study on the copper-chemical mechanical polishing method using water-soluble fullerenol slurry -investigation of polishing performance
AU - Tachika, Hideyuki
AU - Takaya, Yasuhiro
AU - Hayashi, Terutake
AU - Tanada, Hiroki
AU - Kokubo, Ken
AU - Suzuki, Keisuke
PY - 2009/1/1
Y1 - 2009/1/1
N2 - Chemical mechanical polishing (CMP) is a key process used for the multilayer copper interconnects. In recent years, the most common problem encountered in this regard is the inability of conventional abrasive grains to adapt to the next-generation semiconductors owing to their large particle sizes. Hence, this study proposes a water-soluble fullerenol (C6o(OH) 36) as a novel abrasive grain for Cu-CMP because of its advantageous features such as high water solubility and uniformity of particle size (1 nm); further, there is no risk of contamination of the metal when using C 6o(OH)36). In this paper, the excellent grain abrasive properties of C6o(OH)36) and its chemical affinity for copper are reported. It is experimentally confirmed that owing to its high chemical reactivity, a slurry containing C6o(OH)36) can be used to improve the rms surface roughness from 20 to 0.5 nm.
AB - Chemical mechanical polishing (CMP) is a key process used for the multilayer copper interconnects. In recent years, the most common problem encountered in this regard is the inability of conventional abrasive grains to adapt to the next-generation semiconductors owing to their large particle sizes. Hence, this study proposes a water-soluble fullerenol (C6o(OH) 36) as a novel abrasive grain for Cu-CMP because of its advantageous features such as high water solubility and uniformity of particle size (1 nm); further, there is no risk of contamination of the metal when using C 6o(OH)36). In this paper, the excellent grain abrasive properties of C6o(OH)36) and its chemical affinity for copper are reported. It is experimentally confirmed that owing to its high chemical reactivity, a slurry containing C6o(OH)36) can be used to improve the rms surface roughness from 20 to 0.5 nm.
UR - http://www.scopus.com/inward/record.url?scp=77955448918&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77955448918&partnerID=8YFLogxK
U2 - 10.2493/jjspe.75.489
DO - 10.2493/jjspe.75.489
M3 - Article
AN - SCOPUS:77955448918
VL - 75
SP - 489
EP - 495
JO - Seimitsu Kogaku Kaishi/Journal of the Japan Society for Precision Engineering
JF - Seimitsu Kogaku Kaishi/Journal of the Japan Society for Precision Engineering
SN - 0912-0289
IS - 4
ER -