Subpicosecond surface-restricted carrier and thermal dynamics by transient reflectivity measurements

Takayuki Tanaka, Akira Harata, Tsuguo Sawada

    研究成果: Contribution to journalArticle査読

    68 被引用数 (Scopus)

    抄録

    Ultrafast measurements of photoexcited carrier dynamics within a 60 nm subsurface of a crystalline silicon wafer were carried out using subpicosecond transient reflectivity. A uv pump light was employed to restrict carrier generation to occur within the subsurface by direct interband transitions. Carrier diffusion was found to be suppressed in the subsurface region of the intrinsic silicon wafer. For ion-implanted silicon wafers, heat was generated within a few picoseconds after the laser irradiation. By scanning a partially ion-implanted silicon wafer, the two-dimensional image was obtained, which showed that time-resolved imaging can separately map photoexcited carrier density and transient temperature rise. The possibility of three-dimensional process monitoring was considered as well.

    本文言語英語
    ページ(範囲)4033-4038
    ページ数6
    ジャーナルJournal of Applied Physics
    82
    8
    DOI
    出版ステータス出版済み - 10 15 1997

    All Science Journal Classification (ASJC) codes

    • 物理学および天文学(全般)

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