Substrate temperature dependence of photovoltaic properties of β-FeSi2/Si heterojunctions prepared by facing-target DC sputtering

Mahmoud Shaban, Kazuhiro Narashima, Tsuyoshi Yoshitake

    研究成果: Contribution to journalArticle査読

    18 被引用数 (Scopus)

    抄録

    We fabricated n-type β-FeSi2/p-type Si heterojunctions to be used as thin-film solar cells by the facing-target DC sputtering method. The β-FeSi2 films were deposited on Si(111) substrates at different substrate temperatures ranging from 525 to 660°C. The effect of the substrate temperature on the photovoltaic properties was studied on the basis of the current-voltage characterization and the crystalline structural evaluation of the β-FeSi2/Si heterojunctions. It was found that 600°C is the optimum substrate temperature suitable for the photovoltaic application.

    本文言語英語
    ページ(範囲)7708-7710
    ページ数3
    ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    46
    12
    DOI
    出版ステータス出版済み - 12 6 2007

    All Science Journal Classification (ASJC) codes

    • 工学(全般)
    • 物理学および天文学(全般)

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