We fabricated n-type β-FeSi2/p-type Si heterojunctions to be used as thin-film solar cells by the facing-target DC sputtering method. The β-FeSi2 films were deposited on Si(111) substrates at different substrate temperatures ranging from 525 to 660°C. The effect of the substrate temperature on the photovoltaic properties was studied on the basis of the current-voltage characterization and the crystalline structural evaluation of the β-FeSi2/Si heterojunctions. It was found that 600°C is the optimum substrate temperature suitable for the photovoltaic application.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||出版済み - 12 6 2007|
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