Successive Bloch line write operation in a 1-μM bubble material

K. Matsuyama, T. Ohyama, H. Asada, K. Taniguchi

研究成果: ジャーナルへの寄稿学術誌査読

5 被引用数 (Scopus)

抄録

The successive vertical Bloch line (VBL) write operation has been performed in an as-grown 1-μm bubble material with a flank wall writing scheme. An unwinding VBL pair was nucleated by a domain expanding pulse current (200-mA amplitude, 200-ns pulse width, 8-ns rising edge) applied through a hair-pin type conductor (gap:2.6 μm, width:4 μm). The VBL position was controlled by a local in-plane magnetic field produced by a conductor current of 30 mA and a uniform in-plane magnetic field of 10 Oe. The above operating parameters were adjusted by measuring the collapse field of the stripe domain as a function of the parameters. The increase of bubble collapse field from 442 to 513 Oe in accordance with the number of write operations indicated a successful write operation.

本文言語英語
ページ(範囲)6086-6088
ページ数3
ジャーナルJournal of Applied Physics
75
10
DOI
出版ステータス出版済み - 1994

!!!All Science Journal Classification (ASJC) codes

  • 物理学および天文学(全般)

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