Super low temperature doping of phosphorus to Poly-Si thin films using XeF excimer laser irradiation in phosphoric acid solution

Akira Suwa, Hiroshi Ikenoue, Hiroaki Oizumi, Daisuke Nakamura, Tatsuo Okada

研究成果: Contribution to journalConference article

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In this paper, we report on super Ion1 temperature doping of phosphorus to pofy-Si thin films using XeF excimer laser irradiation in a phosphoric acid solution. In this method, the implantation of P atoms and dopant activation can be performed simultaneously. We prepared pofy-Si films with a thickness of SO nm, and these films were crystallized using XeF excimer laser annealing. After laser doping, the concentration of P atoms in the pofy-Si films was approximately 3.5 × 1018 cm-3, and the resistance of the pofy-Si films decreased by approximately 0.003 times as compared with that before laser doping.

元の言語英語
ページ(範囲)1206-1209
ページ数4
ジャーナルDigest of Technical Papers - SID International Symposium
47
発行部数1
出版物ステータス出版済み - 1 1 2016
イベント54th Annual SID Symposium, Seminar, and Exhibition 2016, Display Week 2016 - San Francisco, 米国
継続期間: 5 22 20165 27 2016

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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