In this paper, we report on super Ion1 temperature doping of phosphorus to pofy-Si thin films using XeF excimer laser irradiation in a phosphoric acid solution. In this method, the implantation of P atoms and dopant activation can be performed simultaneously. We prepared pofy-Si films with a thickness of SO nm, and these films were crystallized using XeF excimer laser annealing. After laser doping, the concentration of P atoms in the pofy-Si films was approximately 3.5 × 1018 cm-3, and the resistance of the pofy-Si films decreased by approximately 0.003 times as compared with that before laser doping.
|ジャーナル||Digest of Technical Papers - SID International Symposium|
|出版物ステータス||出版済み - 1 1 2016|
|イベント||54th Annual SID Symposium, Seminar, and Exhibition 2016, Display Week 2016 - San Francisco, 米国|
継続期間: 5 22 2016 → 5 27 2016
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