Super low temperature doping of phosphorus to Poly-Si thin films using XeF excimer laser irradiation in phosphoric acid solution

Akira Suwa, Hiroshi Ikenoue, Hiroaki Oizumi, Daisuke Nakamura, Tatsuo Okada

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

1 被引用数 (Scopus)

抄録

In this paper, we report on super Ion1 temperature doping of phosphorus to pofy-Si thin films using XeF excimer laser irradiation in a phosphoric acid solution. In this method, the implantation of P atoms and dopant activation can be performed simultaneously. We prepared pofy-Si films with a thickness of SO nm, and these films were crystallized using XeF excimer laser annealing. After laser doping, the concentration of P atoms in the pofy-Si films was approximately 3.5 × 1018 cm-3, and the resistance of the pofy-Si films decreased by approximately 0.003 times as compared with that before laser doping.

本文言語英語
ホスト出版物のタイトルDigest of Technical Papers - SID International Symposium
出版社Blackwell Publishing Ltd.
ページ1206-1209
ページ数4
1
ISBN(電子版)9781510832909, 9781510832909, 9781510832909
DOI
出版ステータス出版済み - 2016
イベント54th Annual SID Symposium, Seminar, and Exhibition 2016, Display Week 2016 - San Francisco, 米国
継続期間: 5月 22 20165月 27 2016

出版物シリーズ

名前Digest of Technical Papers - SID International Symposium
番号1
47
ISSN(印刷版)0097-966X
ISSN(電子版)2168-0159

会議

会議54th Annual SID Symposium, Seminar, and Exhibition 2016, Display Week 2016
国/地域米国
CitySan Francisco
Period5/22/165/27/16

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)

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