Suppressing the lateral growth during HVPE-GaN crystallization in the c-direction

Tomasz Sochacki, Slawomir Sakowski, Pawel Kempisty, Mikolaj Amilusik, Piotr Jaroszynski, Malgorzata Iwinska, Michal Bockowski

研究成果: Contribution to journalArticle査読

抄録

Different configurations of the growth zone were examined for crystallization of HVPE-GaN. The motivation for this work was to suppress growth in the lateral directions which appears on the seed edges during crystallization in the [0 0 0 1] direction. This phenomenon is a significant problem for growing thick GaN boules. Changes in the configuration involved placing molybdenum elements close to the growing crystal. Such a solution allowed to decrease the area of material deposited at the edges. The reason for this was examined with Computational Fluid Dynamics simulations. Distributions of reagents over the seed and the resulting supersaturation were examined. The value of the latter was lower near the edges of the crystal where the molybdenum elements were placed.

本文言語英語
論文番号125986
ジャーナルJournal of Crystal Growth
556
DOI
出版ステータス出版済み - 2 15 2021

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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