Suppression of floating body effects in polycrystalline silicon thin-film transistor by schottky source/drain structure

Taizoh Sadoh, Yasuhiro Ohyama, Atsushi Kenjo, Keiji Ikeda, Yoshimi Yamashita, Masanobu Miyao

研究成果: Contribution to journalArticle査読

4 被引用数 (Scopus)

抄録

Thin-film transistors (TFTs) with Schottky source/drain (S/D) structures were fabricated using NiSi and laser-annealed polycrystalline silicon (poly-Si) as Schottky barrier metals and active layers, respectively. The whole fabrication process was performed at low temperatures (<500°C). The TFTs showed good ambipolar operation characteristics with Ion/I off of ∼105 for both the p-channel and n-channel modes. Moreover, the kink effects due to floating body effects, which were observed in conventionally doped S/D TFTs, were successfully suppressed.

本文言語英語
ページ(範囲)4370-4373
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
5 B
DOI
出版ステータス出版済み - 5 25 2006

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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