Suppression of switching loss dependence on charge imbalance of superjunction MOSFET

Hiroaki Yamashita, Hideyuki Ura, Syotaro Ono, Masato Nashiki, Kenji Mii, Wataru Saito, Jun Onodera, Yoshitaka Hokomoto

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

4 引用 (Scopus)

抜粋

We discuss switching behavior of superjunction (SJ)-MOSFETs in terms of interaction between MOS gate structure and charge imbalance (CIB) of SJ structure. Resistive load switching behavior of SJ-MOSFET was analyzed by device simulation. CIB changes the gate voltage transient behavior between gate threshold voltage and gate plateau voltage via modification of the potential near the gate. We found key parameter which determines the effect of MOS structure and layout upon loss, and indicated robust MOS gate design and layout from the perspective of switching loss. Finally, we confirmed the conclusion by experiment.

元の言語英語
ホスト出版物のタイトル2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015
出版者Institute of Electrical and Electronics Engineers Inc.
ページ405-408
ページ数4
ISBN(電子版)9781479962594
DOI
出版物ステータス出版済み - 6 12 2015
外部発表Yes
イベント27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015 - Hong Kong, 中国
継続期間: 5 10 20155 14 2015

出版物シリーズ

名前Proceedings of the International Symposium on Power Semiconductor Devices and ICs
2015-June
ISSN(印刷物)1063-6854

その他

その他27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015
中国
Hong Kong
期間5/10/155/14/15

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • これを引用

    Yamashita, H., Ura, H., Ono, S., Nashiki, M., Mii, K., Saito, W., Onodera, J., & Hokomoto, Y. (2015). Suppression of switching loss dependence on charge imbalance of superjunction MOSFET. : 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015 (pp. 405-408). [7123475] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; 巻数 2015-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2015.7123475