Suppression of switching loss dependence on charge imbalance of superjunction MOSFET

Hiroaki Yamashita; Hideyuki Ura; Syotaro Ono; Masato Nashiki; Kenji Mii; Wataru Saito; Jun Onodera; Yoshitaka Hokomoto

doi:10.1109/ISPSD.2015.7123475

Suppression of switching loss dependence on charge imbalance of superjunction MOSFET

Hiroaki Yamashita, Hideyuki Ura, Syotaro Ono, Masato Nashiki, Kenji Mii, Wataru Saito, Jun Onodera, Yoshitaka Hokomoto

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

4 被引用数 (Scopus)

抄録

We discuss switching behavior of superjunction (SJ)-MOSFETs in terms of interaction between MOS gate structure and charge imbalance (CIB) of SJ structure. Resistive load switching behavior of SJ-MOSFET was analyzed by device simulation. CIB changes the gate voltage transient behavior between gate threshold voltage and gate plateau voltage via modification of the potential near the gate. We found key parameter which determines the effect of MOS structure and layout upon loss, and indicated robust MOS gate design and layout from the perspective of switching loss. Finally, we confirmed the conclusion by experiment.

本文言語	英語
ホスト出版物のタイトル	2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	405-408
ページ数	4
ISBN（電子版）	9781479962594
DOI	https://doi.org/10.1109/ISPSD.2015.7123475
出版ステータス	出版済み - 6月 12 2015
外部発表	はい
イベント	27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015 - Hong Kong, 中国継続期間: 5月 10 2015 → 5月 14 2015

出版物シリーズ

名前	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
巻	2015-June
ISSN（印刷版）	1063-6854

その他

その他	27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015
国/地域	中国
City	Hong Kong
Period	5/10/15 → 5/14/15

!!!All Science Journal Classification (ASJC) codes

工学（全般）

文献へのアクセス

10.1109/ISPSD.2015.7123475

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引用スタイル

Yamashita, H., Ura, H., Ono, S., Nashiki, M., Mii, K., Saito, W., Onodera, J., & Hokomoto, Y. (2015). Suppression of switching loss dependence on charge imbalance of superjunction MOSFET. In 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015 (pp. 405-408). [7123475] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2015-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2015.7123475

Suppression of switching loss dependence on charge imbalance of superjunction MOSFET. / Yamashita, Hiroaki; Ura, Hideyuki; Ono, Syotaro その他.
2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 405-408 7123475 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2015-June).

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

Yamashita, H, Ura, H, Ono, S, Nashiki, M, Mii, K, Saito, W, Onodera, J & Hokomoto, Y 2015, Suppression of switching loss dependence on charge imbalance of superjunction MOSFET. in 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015., 7123475, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, vol. 2015-June, Institute of Electrical and Electronics Engineers Inc., pp. 405-408, 27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015, Hong Kong, 中国, 5/10/15. https://doi.org/10.1109/ISPSD.2015.7123475

Yamashita H, Ura H, Ono S, Nashiki M, Mii K, Saito W その他. Suppression of switching loss dependence on charge imbalance of superjunction MOSFET. In 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 405-408. 7123475. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). doi: 10.1109/ISPSD.2015.7123475

Yamashita, Hiroaki ; Ura, Hideyuki ; Ono, Syotaro その他. / Suppression of switching loss dependence on charge imbalance of superjunction MOSFET. 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 405-408 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

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abstract = "We discuss switching behavior of superjunction (SJ)-MOSFETs in terms of interaction between MOS gate structure and charge imbalance (CIB) of SJ structure. Resistive load switching behavior of SJ-MOSFET was analyzed by device simulation. CIB changes the gate voltage transient behavior between gate threshold voltage and gate plateau voltage via modification of the potential near the gate. We found key parameter which determines the effect of MOS structure and layout upon loss, and indicated robust MOS gate design and layout from the perspective of switching loss. Finally, we confirmed the conclusion by experiment.",

author = "Hiroaki Yamashita and Hideyuki Ura and Syotaro Ono and Masato Nashiki and Kenji Mii and Wataru Saito and Jun Onodera and Yoshitaka Hokomoto",

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AU - Yamashita, Hiroaki

AU - Ura, Hideyuki

AU - Ono, Syotaro

AU - Nashiki, Masato

AU - Mii, Kenji

AU - Saito, Wataru

AU - Onodera, Jun

AU - Hokomoto, Yoshitaka

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N2 - We discuss switching behavior of superjunction (SJ)-MOSFETs in terms of interaction between MOS gate structure and charge imbalance (CIB) of SJ structure. Resistive load switching behavior of SJ-MOSFET was analyzed by device simulation. CIB changes the gate voltage transient behavior between gate threshold voltage and gate plateau voltage via modification of the potential near the gate. We found key parameter which determines the effect of MOS structure and layout upon loss, and indicated robust MOS gate design and layout from the perspective of switching loss. Finally, we confirmed the conclusion by experiment.

AB - We discuss switching behavior of superjunction (SJ)-MOSFETs in terms of interaction between MOS gate structure and charge imbalance (CIB) of SJ structure. Resistive load switching behavior of SJ-MOSFET was analyzed by device simulation. CIB changes the gate voltage transient behavior between gate threshold voltage and gate plateau voltage via modification of the potential near the gate. We found key parameter which determines the effect of MOS structure and layout upon loss, and indicated robust MOS gate design and layout from the perspective of switching loss. Finally, we confirmed the conclusion by experiment.

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Suppression of switching loss dependence on charge imbalance of superjunction MOSFET

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出版物シリーズ

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!!!All Science Journal Classification (ASJC) codes

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