Surface Activated Bonding of ALD Al2O3films

Junsha Wang; Ryo Takigawa; Tadatomo Suga

doi:10.1109/ICSJ55786.2022.10034666

Surface Activated Bonding of ALD Al₂O₃films

Junsha Wang, Ryo Takigawa, Tadatomo Suga

集積電子システム

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

抄録

Plasma enhanced ALD Al2O3 films were successfully bonded by surface activated bonding. The increase of O2 plasma power for deposition promoted the crystallinity of Al2O3 slightly, and the additional H2 plasma post-treatment improved the hydrophilicity of the film dramatically. The bond strength in humid air was not affected strongly by film deposition parameters, while that in dry N2 was improved by both methods. Water stress corrosion has a big effect on the debonding process resulting in higher bond strength in dry N2. Under the same debonding atmosphere, the bond strength of amorphous Al2O3 films was slightly lower than that of sapphire bonding.

本文言語	英語
ホスト出版物のタイトル	2022 IEEE CPMT Symposium Japan, ICSJ 2022
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	57-60
ページ数	4
ISBN（電子版）	9781665486132
DOI	https://doi.org/10.1109/ICSJ55786.2022.10034666
出版ステータス	出版済み - 2022
イベント	11th IEEE CPMT Symposium Japan, ICSJ 2022 - Kyoto, 日本継続期間: 11月 9 2022 → 11月 11 2022

出版物シリーズ

名前	2022 IEEE CPMT Symposium Japan, ICSJ 2022

会議

会議	11th IEEE CPMT Symposium Japan, ICSJ 2022
国/地域	日本
City	Kyoto
Period	11/9/22 → 11/11/22

!!!All Science Journal Classification (ASJC) codes

電子工学および電気工学
電子材料、光学材料、および磁性材料
器械工学
原子分子物理学および光学

文献へのアクセス

10.1109/ICSJ55786.2022.10034666

他のファイルとリンク

引用スタイル

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abstract = "Plasma enhanced ALD Al2O3 films were successfully bonded by surface activated bonding. The increase of O2 plasma power for deposition promoted the crystallinity of Al2O3 slightly, and the additional H2 plasma post-treatment improved the hydrophilicity of the film dramatically. The bond strength in humid air was not affected strongly by film deposition parameters, while that in dry N2 was improved by both methods. Water stress corrosion has a big effect on the debonding process resulting in higher bond strength in dry N2. Under the same debonding atmosphere, the bond strength of amorphous Al2O3 films was slightly lower than that of sapphire bonding.",

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AB - Plasma enhanced ALD Al2O3 films were successfully bonded by surface activated bonding. The increase of O2 plasma power for deposition promoted the crystallinity of Al2O3 slightly, and the additional H2 plasma post-treatment improved the hydrophilicity of the film dramatically. The bond strength in humid air was not affected strongly by film deposition parameters, while that in dry N2 was improved by both methods. Water stress corrosion has a big effect on the debonding process resulting in higher bond strength in dry N2. Under the same debonding atmosphere, the bond strength of amorphous Al2O3 films was slightly lower than that of sapphire bonding.

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