Surface activated bonding of aluminum oxide films at room temperature

Jun Utsumi, Ryo Takigawa

研究成果: ジャーナルへの寄稿学術誌査読

7 被引用数 (Scopus)

抄録

We have investigated the surface activated bonding (SAB) of deposited Al2O3 films by chemical vapor deposition under a short-time activated condition at room temperature. Although the surface energy for bonding of Al2O3 films was very low, that of Al2O3 film/sapphire bonding was approximately 1 J m − 2 and more than 2 J m − 2 for sapphire/sapphire bonding. Transmission electron microscopy showed an amorphous-like intermediate layer approximately 1 nm thick, observed at the bonding interface of Al2O3/Al2O3, but not in the bonding of Al2O3/sapphire, which suggests that the crystallinity of the Al2O3 film affects the bonding of Al2O3.

本文言語英語
ページ(範囲)215-218
ページ数4
ジャーナルScripta Materialia
191
DOI
出版ステータス出版済み - 1月 15 2021

!!!All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学
  • 金属および合金

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