Surface activated flip-chip bonding of laser chips

Eiji Higurashi, Tadatomo Suga, Masao Nakagawa, Renshi Sawada

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抜粋

This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing the surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air with applied static pressure. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.

元の言語英語
ホスト出版物のタイトルProceedings of the ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005
ページ793-796
ページ数4
PART A
出版物ステータス出版済み - 2005
イベントASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005 - San Francisco, CA, 米国
継続期間: 7 17 20057 22 2005

その他

その他ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005
米国
San Francisco, CA
期間7/17/057/22/05

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • これを引用

    Higurashi, E., Suga, T., Nakagawa, M., & Sawada, R. (2005). Surface activated flip-chip bonding of laser chips. : Proceedings of the ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005 (巻 PART A, pp. 793-796)