@inproceedings{4131ef0ff2a24340b4801a31f94b1748,
title = "Surface activated wafer bonding of LiNbO3 and SiO2/Si for LNOI on Si",
abstract = "Wafer-level bonding of LiNbO3 (LN) and Si with thermally grown SiO2 layer is demonstrated using surface-activated bonding method for the realization of LiNbO3-on-Insulator (LNOI) on Si.",
author = "Ryo Takigawa and Eiji Higurashi and Tanemasa Asano",
year = "2017",
month = jun,
day = "13",
doi = "10.23919/LTB-3D.2017.7947443",
language = "English",
series = "Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017",
address = "United States",
note = "5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 ; Conference date: 16-05-2017 Through 18-05-2017",
}