抜粋
Wafer-level bonding of LiNbO3 (LN) and Si with thermally grown SiO2 layer is demonstrated using surface-activated bonding method for the realization of LiNbO3-on-Insulator (LNOI) on Si.
| 元の言語 | 英語 |
|---|---|
| ホスト出版物のタイトル | Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 |
| 出版者 | Institute of Electrical and Electronics Engineers Inc. |
| ページ数 | 1 |
| ISBN（電子版） | 9784904743034 |
| DOI | |
| 出版物ステータス | 出版済み - 6 13 2017 |
| イベント | 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 - Tokyo, 日本 継続期間: 5 16 2017 → 5 18 2017 |
出版物シリーズ
| 名前 | Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 |
|---|
その他
| その他 | 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 |
|---|---|
| 国 | 日本 |
| 市 | Tokyo |
| 期間 | 5/16/17 → 5/18/17 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Industrial and Manufacturing Engineering
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
フィンガープリント Surface activated wafer bonding of LiNbO<sub>3</sub> and SiO<sub>2</sub>/Si for LNOI on Si' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Takigawa, R., Higurashi, E., & Asano, T. (2017). Surface activated wafer bonding of LiNbO3 and SiO2/Si for LNOI on Si. ： Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 [7947443] (Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/LTB-3D.2017.7947443