Surface activated wafer bonding of LiNbO3 and SiO2/Si for LNOI on Si

Ryo Takigawa, Eiji Higurashi, Tanemasa Asano

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

1 引用 (Scopus)

抜粋

Wafer-level bonding of LiNbO3 (LN) and Si with thermally grown SiO2 layer is demonstrated using surface-activated bonding method for the realization of LiNbO3-on-Insulator (LNOI) on Si.

元の言語英語
ホスト出版物のタイトルProceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
出版者Institute of Electrical and Electronics Engineers Inc.
ページ数1
ISBN(電子版)9784904743034
DOI
出版物ステータス出版済み - 6 13 2017
イベント5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 - Tokyo, 日本
継続期間: 5 16 20175 18 2017

出版物シリーズ

名前Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017

その他

その他5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
日本
Tokyo
期間5/16/175/18/17

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

フィンガープリント Surface activated wafer bonding of LiNbO<sub>3</sub> and SiO<sub>2</sub>/Si for LNOI on Si' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Takigawa, R., Higurashi, E., & Asano, T. (2017). Surface activated wafer bonding of LiNbO3 and SiO2/Si for LNOI on Si. : Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 [7947443] (Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/LTB-3D.2017.7947443