Surface band-bending and Fermi-level pinning in doped Si observed by Kelvin force microscopy

Makoto Arita, Kazuhisa Torigoe, Takashi Yamauchi, Takashi Nagaoka, Toru Aiso, Yasuhisa Yamashita, Teruaki Motooka

研究成果: ジャーナルへの寄稿記事

9 引用 (Scopus)

抄録

The workfunction change in doped Si was examined using Kelvin force microscopy in a wide range of doping concentrations from p-type ∼10 19 to n-type ∼1020cm-3 corresponding to the bulk Fermi-level positions from near the valence-band top to conduction-band minimum. Experimental data can be reproduced by model calculations using an appropriate surface-state density composed of the donor- and acceptor-like gap states. These results indicate that no appreciable surface-band bending occurs for doping concentrations less than ∼1014cm-3 while the bending becomes prominent and the surface Fermi-level is eventually pinned in the midgap region as the concentration increases to ∼10 20cm-3.

元の言語英語
記事番号132103
ジャーナルApplied Physics Letters
104
発行部数13
DOI
出版物ステータス出版済み - 3 31 2014

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microscopy
Fermi surfaces
conduction bands
valence

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

これを引用

Arita, M., Torigoe, K., Yamauchi, T., Nagaoka, T., Aiso, T., Yamashita, Y., & Motooka, T. (2014). Surface band-bending and Fermi-level pinning in doped Si observed by Kelvin force microscopy. Applied Physics Letters, 104(13), [132103]. https://doi.org/10.1063/1.4870419

Surface band-bending and Fermi-level pinning in doped Si observed by Kelvin force microscopy. / Arita, Makoto; Torigoe, Kazuhisa; Yamauchi, Takashi; Nagaoka, Takashi; Aiso, Toru; Yamashita, Yasuhisa; Motooka, Teruaki.

:: Applied Physics Letters, 巻 104, 番号 13, 132103, 31.03.2014.

研究成果: ジャーナルへの寄稿記事

Arita, M, Torigoe, K, Yamauchi, T, Nagaoka, T, Aiso, T, Yamashita, Y & Motooka, T 2014, 'Surface band-bending and Fermi-level pinning in doped Si observed by Kelvin force microscopy', Applied Physics Letters, 巻. 104, 番号 13, 132103. https://doi.org/10.1063/1.4870419
Arita, Makoto ; Torigoe, Kazuhisa ; Yamauchi, Takashi ; Nagaoka, Takashi ; Aiso, Toru ; Yamashita, Yasuhisa ; Motooka, Teruaki. / Surface band-bending and Fermi-level pinning in doped Si observed by Kelvin force microscopy. :: Applied Physics Letters. 2014 ; 巻 104, 番号 13.
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