Surface flattening of poly-Si thin films by laser annealing and electrical properties of LTPS-TFTs

Fuminobu Hamano, Akira Mizutani, Kaname Imokawa, Daisuke Nakamura, Tetsuya Goto, Hiroshi Ikenoue

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抜粋

Low-temperature poly-Si (LTPS) thin films formed by excimer laser annealing (ELA) are used as the channel material for thin film transistors (TFTs), which have an application as switching devices in flat panel displays. It is well known that one of the major problems in TFT manufacturing is the prominent ridges that form on LTPS thin films after ELA due to volume expansion by crystallization, which in turn induces gate leakage current in the TFTs. In this presentation, we report on the use of additional laser irradiation to reduce the height of the ridges and resulting changes in the electrical properties of LTPS-TFTs.

元の言語英語
ホスト出版物のタイトルLaser-Based Micro- and Nanoprocessing XIV
編集者Udo Klotzbach, Akira Watanabe, Rainer Kling
出版者SPIE
ISBN(電子版)9781510632998
DOI
出版物ステータス出版済み - 2020
イベントLaser-Based Micro- and Nanoprocessing XIV 2020 - San Francisco, 米国
継続期間: 2 3 20202 6 2020

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
11268
ISSN(印刷物)0277-786X
ISSN(電子版)1996-756X

会議

会議Laser-Based Micro- and Nanoprocessing XIV 2020
米国
San Francisco
期間2/3/202/6/20

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • これを引用

    Hamano, F., Mizutani, A., Imokawa, K., Nakamura, D., Goto, T., & Ikenoue, H. (2020). Surface flattening of poly-Si thin films by laser annealing and electrical properties of LTPS-TFTs. : U. Klotzbach, A. Watanabe, & R. Kling (版), Laser-Based Micro- and Nanoprocessing XIV [1126810] (Proceedings of SPIE - The International Society for Optical Engineering; 巻数 11268). SPIE. https://doi.org/10.1117/12.2544910