Surface morphology evolution induced by multiple femtosecond laser ablation on 4H-SiC substrate and its application to CMP

Chengwu Wang, Syuhei Kurokawa, Toshiro Doi, Julong Yuan, Binghai Lv, Kehua Zhang

研究成果: ジャーナルへの寄稿記事

1 引用 (Scopus)

抄録

4H silicon carbide (SiC) substrates were processed by multiple femtosecond (fs) laser ablation. Its surface morphologies changed dramatically at different scanning pitches, different scanning velocities, different repetition rates and near-threshold fluence. The evolution of surface morphologies and the uniformity of rippled structures were respectively investigated and discussed. The overlapped zones of adjacent pulses were focused in discussion. In the case of high repetition rate, periodic ripples with average spatial periodicities ranging from 145 nm to 196 nm were induced; whereas in the case of lower repetition rate, coarse ripples (roughly 440 nm) and fine ripples (about 117 nm) were simultaneously formed. Large amount of agglomeration was fabricated in the case of scanning pitch 0.05 μm and scanning velocity ≤ 5 mm/s. At near-threshold fluence, 4H-SiC surface was partly ablated. When the rippled structures induced in Transverse Irradiation Mode were further ablated in Cross Scanning Mode, horizontal ripples changed into vertical ripples. X-ray diffraction and Raman spectra were utilized for surface analysis. Confirmatory experiment was carried out, demonstrating that chemical mechanical polishing (CMP) process could be promoted by fs laser ablation.

元の言語英語
ページ(範囲)P853-P861
ジャーナルECS Journal of Solid State Science and Technology
6
発行部数12
DOI
出版物ステータス出版済み - 1 1 2017

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Chemical mechanical polishing
Laser ablation
Ultrashort pulses
Silicon carbide
Surface morphology
Scanning
Substrates
Surface analysis
Raman scattering
Agglomeration
silicon carbide
Irradiation
X ray diffraction
Experiments

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

これを引用

Surface morphology evolution induced by multiple femtosecond laser ablation on 4H-SiC substrate and its application to CMP. / Wang, Chengwu; Kurokawa, Syuhei; Doi, Toshiro; Yuan, Julong; Lv, Binghai; Zhang, Kehua.

:: ECS Journal of Solid State Science and Technology, 巻 6, 番号 12, 01.01.2017, p. P853-P861.

研究成果: ジャーナルへの寄稿記事

@article{cc52d9903dce4ddc80acaded5ac62d5c,
title = "Surface morphology evolution induced by multiple femtosecond laser ablation on 4H-SiC substrate and its application to CMP",
abstract = "4H silicon carbide (SiC) substrates were processed by multiple femtosecond (fs) laser ablation. Its surface morphologies changed dramatically at different scanning pitches, different scanning velocities, different repetition rates and near-threshold fluence. The evolution of surface morphologies and the uniformity of rippled structures were respectively investigated and discussed. The overlapped zones of adjacent pulses were focused in discussion. In the case of high repetition rate, periodic ripples with average spatial periodicities ranging from 145 nm to 196 nm were induced; whereas in the case of lower repetition rate, coarse ripples (roughly 440 nm) and fine ripples (about 117 nm) were simultaneously formed. Large amount of agglomeration was fabricated in the case of scanning pitch 0.05 μm and scanning velocity ≤ 5 mm/s. At near-threshold fluence, 4H-SiC surface was partly ablated. When the rippled structures induced in Transverse Irradiation Mode were further ablated in Cross Scanning Mode, horizontal ripples changed into vertical ripples. X-ray diffraction and Raman spectra were utilized for surface analysis. Confirmatory experiment was carried out, demonstrating that chemical mechanical polishing (CMP) process could be promoted by fs laser ablation.",
author = "Chengwu Wang and Syuhei Kurokawa and Toshiro Doi and Julong Yuan and Binghai Lv and Kehua Zhang",
year = "2017",
month = "1",
day = "1",
doi = "10.1149/2.0261712jss",
language = "English",
volume = "6",
pages = "P853--P861",
journal = "ECS Journal of Solid State Science and Technology",
issn = "2162-8769",
publisher = "Electrochemical Society, Inc.",
number = "12",

}

TY - JOUR

T1 - Surface morphology evolution induced by multiple femtosecond laser ablation on 4H-SiC substrate and its application to CMP

AU - Wang, Chengwu

AU - Kurokawa, Syuhei

AU - Doi, Toshiro

AU - Yuan, Julong

AU - Lv, Binghai

AU - Zhang, Kehua

PY - 2017/1/1

Y1 - 2017/1/1

N2 - 4H silicon carbide (SiC) substrates were processed by multiple femtosecond (fs) laser ablation. Its surface morphologies changed dramatically at different scanning pitches, different scanning velocities, different repetition rates and near-threshold fluence. The evolution of surface morphologies and the uniformity of rippled structures were respectively investigated and discussed. The overlapped zones of adjacent pulses were focused in discussion. In the case of high repetition rate, periodic ripples with average spatial periodicities ranging from 145 nm to 196 nm were induced; whereas in the case of lower repetition rate, coarse ripples (roughly 440 nm) and fine ripples (about 117 nm) were simultaneously formed. Large amount of agglomeration was fabricated in the case of scanning pitch 0.05 μm and scanning velocity ≤ 5 mm/s. At near-threshold fluence, 4H-SiC surface was partly ablated. When the rippled structures induced in Transverse Irradiation Mode were further ablated in Cross Scanning Mode, horizontal ripples changed into vertical ripples. X-ray diffraction and Raman spectra were utilized for surface analysis. Confirmatory experiment was carried out, demonstrating that chemical mechanical polishing (CMP) process could be promoted by fs laser ablation.

AB - 4H silicon carbide (SiC) substrates were processed by multiple femtosecond (fs) laser ablation. Its surface morphologies changed dramatically at different scanning pitches, different scanning velocities, different repetition rates and near-threshold fluence. The evolution of surface morphologies and the uniformity of rippled structures were respectively investigated and discussed. The overlapped zones of adjacent pulses were focused in discussion. In the case of high repetition rate, periodic ripples with average spatial periodicities ranging from 145 nm to 196 nm were induced; whereas in the case of lower repetition rate, coarse ripples (roughly 440 nm) and fine ripples (about 117 nm) were simultaneously formed. Large amount of agglomeration was fabricated in the case of scanning pitch 0.05 μm and scanning velocity ≤ 5 mm/s. At near-threshold fluence, 4H-SiC surface was partly ablated. When the rippled structures induced in Transverse Irradiation Mode were further ablated in Cross Scanning Mode, horizontal ripples changed into vertical ripples. X-ray diffraction and Raman spectra were utilized for surface analysis. Confirmatory experiment was carried out, demonstrating that chemical mechanical polishing (CMP) process could be promoted by fs laser ablation.

UR - http://www.scopus.com/inward/record.url?scp=85047122723&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85047122723&partnerID=8YFLogxK

U2 - 10.1149/2.0261712jss

DO - 10.1149/2.0261712jss

M3 - Article

AN - SCOPUS:85047122723

VL - 6

SP - P853-P861

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

SN - 2162-8769

IS - 12

ER -