Surface plasmon enhanced super bright InGaN light emitter

Koichi Okamoto, Isamu Niki, Alexander Shvartser, Yukio Narukawa, Takashi Mukai, Axel Scherer

研究成果: ジャーナルへの寄稿学術誌査読

12 被引用数 (Scopus)

抄録

We use surface plasmons to increase the light emission efficiency from InGaN/GaN quantum wells by covering these with thin metallic films. Large luminescence enhancements were measured when silver or aluminum layers are deposited 10 nm above an InGaN light emitting layer, whereas no such enhancements are obtained from gold coated samples. The internal quantum efficiencies of quantum wells before and after metallization were determined from the temperature dependence of the photoluminescence intensity. Our results indicate that the use of surface plasmons will lead to a new class of very bright light emitting diodes, and highly efficient solid-state light sources.

本文言語英語
ページ(範囲)2841-2844
ページ数4
ジャーナルPhysica Status Solidi C: Conferences
2
7
DOI
出版ステータス出版済み - 2005
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 凝縮系物理学

フィンガープリント

「Surface plasmon enhanced super bright InGaN light emitter」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル