Surface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in humid atmosphere

Ken Watanabe, Dong Hee Lee, Isao Sakaguchi, Kenji Nomura, Toshio Kamiya, Hajime Haneda, Hideo Hosono, Naoki Ohashi

研究成果: Contribution to journalArticle査読

24 被引用数 (Scopus)

抄録

An isotope tracer study, i.e., 18O/16O exchange using 18O2 and H218O, was performed to determine how post-deposition annealing (PDA) affected surface reactivity and oxygen diffusivity of amorphous indium-gallium-zinc oxide (a-IGZO) films. The oxygen tracer diffusivity was very high in the bulk even at low temperatures, e.g., 200°C, regardless of PDA and exchange conditions. In contrast, the isotope exchange rate, dominated by surface reactivity, was much lower for 18O2 than for H218O. PDA in a humid atmosphere at 400°C further suppressed the reactivity of O2 at the a-IGZO film surface, which is attributable to -OH-terminated surface formation.

本文言語英語
論文番号201904
ジャーナルApplied Physics Letters
103
20
DOI
出版ステータス出版済み - 11 11 2013
外部発表はい

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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