Surface roughness induced electron mobility degradation in InAs nanowires

Fengyun Wang, Senpo Yip, Ning Han, Kitwa Fok, Hao Lin, Jared J. Hou, Guofa Dong, Takfu Hung, K. S. Chan, Johnny C. Ho

研究成果: Contribution to journalArticle査読

43 被引用数 (Scopus)

抄録

In this work, we present a study of the surface roughness dependent electron mobility in InAs nanowires grown by the nickel-catalyzed chemical vapor deposition method. These nanowires have good crystallinity, well-controlled surface morphology without any surface coating or tapering and an excellent peak field-effect mobility up to 15 000 cm2 V-1 s-1 when configured into back-gated field-effect nanowire transistors. Detailed electrical characterizations reveal that the electron mobility degrades monotonically with increasing surface roughness and diameter scaling, while low-temperature measurements further decouple the effects of surface/interface traps and phonon scattering, highlighting the dominant impact of surface roughness scattering on the electron mobility for miniaturized and surface disordered nanowires. All these factors suggest that careful consideration of nanowire geometries and surface condition is required for designing devices with optimal performance.

本文言語英語
論文番号375202
ジャーナルNanotechnology
24
37
DOI
出版ステータス出版済み - 9 20 2013
外部発表はい

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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