Surface tension and wettability between silicon nitride of RE 2O3-MgO-SiO2 (RE = Y, Gd, Nd and La) melts

Hirofumi Tokunaga, Satoru Ideguchi, Fumiyuki Shimizu, Noritaka Saito, Kunihiko Nakashima

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

抄録

The effect of RE2O3 (RE = Y, Gd, Nd, and La) additives on the surface tension of 45.2MgO-54.8SiO2 (mol%) melts have been investigated using the ring (detachment or maximum pull) method. Furthermore, the wettability of RE2O3-MgO-SiO2 melts between the silicon nitride polycrystalline substrate is determined using the sessile drop method. The surface tension of RE2O 3-MgO-SiO2 melts were found to increase with the content of any rare-earth additions, which suggests that a rare-earth oxide behaves as a network modifier of the complex silicate anions in high temperature melts. The surface tension increased in the order of the cationic radius of rare-earth oxides as follows: Y2O3<Gd2O 3<Nd2O3La2O3. The contact angle of RE2O3-MgO-SiO2 melts against the silicon nitride substrate rapidly decreased with the annealing time at 1723 K; after annealing for 50 min, the contact angle remained constant. The contact angle and the penetration depth of melts into the substrate increased in the order of the cationic radius of rare-earth oxides as follows: Y 2O3<Gd2O3<Nd2O 3<La2O3.

元の言語英語
ページ(範囲)445-451
ページ数7
ジャーナルNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
71
発行部数5
DOI
出版物ステータス出版済み - 5 2007

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wettability
Silicon nitride
silicon nitrides
Oxides
Rare earths
Contact angle
Surface tension
Wetting
interfacial tension
rare earth elements
Substrates
Rare earth additions
Annealing
oxides
Silicates
annealing
radii
Anions
Negative ions
detachment

All Science Journal Classification (ASJC) codes

  • Metals and Alloys

これを引用

Surface tension and wettability between silicon nitride of RE 2O3-MgO-SiO2 (RE = Y, Gd, Nd and La) melts. / Tokunaga, Hirofumi; Ideguchi, Satoru; Shimizu, Fumiyuki; Saito, Noritaka; Nakashima, Kunihiko.

:: Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals, 巻 71, 番号 5, 05.2007, p. 445-451.

研究成果: ジャーナルへの寄稿記事

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abstract = "The effect of RE2O3 (RE = Y, Gd, Nd, and La) additives on the surface tension of 45.2MgO-54.8SiO2 (mol{\%}) melts have been investigated using the ring (detachment or maximum pull) method. Furthermore, the wettability of RE2O3-MgO-SiO2 melts between the silicon nitride polycrystalline substrate is determined using the sessile drop method. The surface tension of RE2O 3-MgO-SiO2 melts were found to increase with the content of any rare-earth additions, which suggests that a rare-earth oxide behaves as a network modifier of the complex silicate anions in high temperature melts. The surface tension increased in the order of the cationic radius of rare-earth oxides as follows: Y2O3<Gd2O 3<Nd2O3La2O3. The contact angle of RE2O3-MgO-SiO2 melts against the silicon nitride substrate rapidly decreased with the annealing time at 1723 K; after annealing for 50 min, the contact angle remained constant. The contact angle and the penetration depth of melts into the substrate increased in the order of the cationic radius of rare-earth oxides as follows: Y 2O3<Gd2O3<Nd2O 3<La2O3.",
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