Swirl defect investigation using temperature- and injection-dependent photoluminescence imaging

Amanda Youssef, Jonas Schon, Tim Niewelt, Sebastian Mack, Sungeun Park, Kazuo Nakajima, Kohei Morishita, Ryota Murai, Mallory A. Jensen, Tonio Buonassisi, Martin C. Schubert

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

3 被引用数 (Scopus)

抄録

The swirl defect is observed in both n-type Czochralski (Cz) and non-contact crucible (NOC) Si wafers. It is postulated to be the outcome of oxygen precipitation during crystal growth and/or post-growth high temperature processes, specifically processes involving temperatures in the range of 800°C-1000°C. This defect is characterized by low lifetime ring-like regions that decrease the device performance. We employ a technique based on temperature- and injection-dependent photoluminescence imaging (TIDPLI) to characterize the swirl defect. We compare the calculated fingerprints of the defects responsible for the swirl pattern observed in both Cz and NOC-Si wafers to determine whether the swirls are caused by the same defect. We find significantly different defect fingerprints for the swirl defects in n-type Cz and NOC-Si. The Shockley-Read-Hall (SRH) description of the Cz-Si defects differ not much from the SRH description of intentionally grown oxygen precipitates, whereas the SRH parameters for the NOC-Si defects differ significantly. Identifying the limiting defect, allows us to suggest methods for its annihilation. We then successfully apply a rapid thermal annealing treatment to dissolve swirl defects in Cz-Si samples and homogenize the lifetime.

本文言語英語
ホスト出版物のタイトル2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
出版社Institute of Electrical and Electronics Engineers Inc.
ページ1303-1307
ページ数5
ISBN(電子版)9781509027248
DOI
出版ステータス出版済み - 11 18 2016
外部発表はい
イベント43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, 米国
継続期間: 6 5 20166 10 2016

出版物シリーズ

名前Conference Record of the IEEE Photovoltaic Specialists Conference
2016-November
ISSN(印刷版)0160-8371

その他

その他43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country米国
CityPortland
Period6/5/166/10/16

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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