Switching controllability of high voltage GaN-HEMTs and the cascode connection

Wataru Saito, Yasunobu Saito, Hidetoshi Fujimoto, Akira Yoshioka, Tetsuya Ohno, Toshiyuki Naka, Toru Sugiyama

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

4 引用 (Scopus)

抜粋

This paper reports that the switching controllability of high-voltage GaN-HEMTs and the cascode connection depends on the feedback capacitance design. The switching behavior of the GaN-HEMT can be controlled by the external gate resistance as the same manner as the conventional Si-MOSFETs. The switching controllability was improved by the substrate connection due to the parasitic capacitance change. The controllability of the cascode connection was slightly worse compared with the Si-MOSFET, because the effective feedback capacitance became small by the step by step switching operation.

元の言語英語
ホスト出版物のタイトルProceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12
ページ229-232
ページ数4
DOI
出版物ステータス出版済み - 8 8 2012
外部発表Yes
イベント24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12 - Bruges, ベルギー
継続期間: 6 3 20126 7 2012

出版物シリーズ

名前Proceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN(印刷物)1063-6854

会議

会議24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12
ベルギー
Bruges
期間6/3/126/7/12

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • これを引用

    Saito, W., Saito, Y., Fujimoto, H., Yoshioka, A., Ohno, T., Naka, T., & Sugiyama, T. (2012). Switching controllability of high voltage GaN-HEMTs and the cascode connection. : Proceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12 (pp. 229-232). [6229065] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). https://doi.org/10.1109/ISPSD.2012.6229065