Switching Noise-Loss Trade-Off Improvement of SJ-IGBTs

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

抄録

Design of trench gate and p-column position in Superjunction (SJ)-IGBTs are discussed to improve the tradeoff characteristics between surge voltage/current and turn-off/on losses. Power electronics systems require not only low power loss but also low EMI noise for high cost performance by system downsizing. Although SJ-IGBTs are attractive for low loss operation due to thin drift layer and fast removal of the excess carriers through the p- and n-columns at the turnoff operation, the switching trade-off characteristics of SJIGBTs compared with the conventional IGBT and the improvement design have not been discussed sufficiently. This paper shows better switching trade-off compared with a conventional IGBT can be obtained by the trench gate and p-column designs due to management of the gate capacitance and hole current flow, because negative gate capacitance influences on not only turn-on switching but also turn-off switching.

本文言語英語
ホスト出版物のタイトル2022 34th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022
出版社Institute of Electrical and Electronics Engineers Inc.
ページ53-56
ページ数4
ISBN(電子版)9781665422017
DOI
出版ステータス出版済み - 2022
イベント34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022 - Vancouver, カナダ
継続期間: 5月 22 20225月 25 2022

出版物シリーズ

名前Proceedings of the International Symposium on Power Semiconductor Devices and ICs
2022-May
ISSN(印刷版)1063-6854

会議

会議34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022
国/地域カナダ
CityVancouver
Period5/22/225/25/22

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)

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