Synthesis, characterization and device applications of InGaAs nanowires

Jared J. Hou, Ning Han, Fengyun Wang, Sen Po Yip, Fei Xiu, Tak Fu Hung, Johnny C. Ho

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

As a type of promising nanomaterials, semiconductor nanowires have been extensively studied in the past few years; however, the difficulty of synthesizing nanowires with desirable morphology and high crystal quality hinders the further development. In this study, we provide a simple two-step method to synthesize nanowires with smooth surface, excellent crystal quality and large processing window. These ternary InGaAs nanowires exhibit outstanding electrical performance with high Ion/Ioff ratio (∼106) and electron mobility (∼1300 cm2/Vs), which could be utilized in future integrated circuits.

本文言語英語
ホスト出版物のタイトルLow-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012
出版社Electrochemical Society Inc.
ページ179-185
ページ数7
6
ISBN(印刷版)9781607683544
DOI
出版ステータス出版済み - 2013
外部発表はい
イベントSymposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012 - Honolulu, HI, 米国
継続期間: 10 7 201210 12 2012

出版物シリーズ

名前ECS Transactions
番号6
50
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

その他

その他Symposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012
国/地域米国
CityHonolulu, HI
Period10/7/1210/12/12

All Science Journal Classification (ASJC) codes

  • 工学(全般)

フィンガープリント

「Synthesis, characterization and device applications of InGaAs nanowires」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル