Synthesis of GeSn particles with high substitutional Sn concentration by pulsed laser deposition

Teppei Nakashima, Toshifumi Kikuchi, Kaname Imokawa, Daisuke Nakamura, Hiroshi Ikenoue

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

抄録

We have proposed that germanium-tin (GeSn) particles with high substitutional Sn concentrations can be synthesized by pulsed laser deposition (PLD) in ambient Ar at low pressure (∼100 Pa). In this method, a Ge0.9Sn0.1 target is ablated by KrF excimer laser irradiation. At low Ar pressure (∼100 Pa), the agglomeration of Ge and Sn atoms occurs easily in ambient Ar, and the agglomerated particles are rapidly cooled by collision with Ar atoms. An Si-receiving substrate was placed in front of the target. Various GeSn particles from several 100 nm to approximately 20 μm with spherical, disk, and irregular shapes were deposited on the Si-receiving substrate. In Raman spectra, the Ge-Ge vibration peaks of all the particles were shifted to lower wavenumbers compared with those of the Ge(100) crystal. The Raman peak position reportedly shifts to lower wavenumbers with increased substitutional Sn concentration in crystalline Ge. Thus, GeSn crystal particles with over 10% substituted Sn atoms can be synthesized by low-pressure PLD.

本文言語英語
ホスト出版物のタイトルSynthesis and Photonics of Nanoscale Materials XVI
編集者David B. Geohegan, Jan J. Dubowski, Andrei V. Kabashin
出版社SPIE
ISBN(電子版)9781510624566
DOI
出版ステータス出版済み - 1月 1 2019
イベントSynthesis and Photonics of Nanoscale Materials XVI 2019 - San Francisco, 米国
継続期間: 2月 2 20192月 3 2019

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
10907
ISSN(印刷版)0277-786X
ISSN(電子版)1996-756X

会議

会議Synthesis and Photonics of Nanoscale Materials XVI 2019
国/地域米国
CitySan Francisco
Period2/2/192/3/19

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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