TY - JOUR
T1 - Synthesis of p-type ZnO thin films using co-doping techniques based on KrF excimer laser deposition
AU - Ohshima, Tamiko
AU - Ikegami, Tomoaki
AU - Ebihara, Kenji
AU - Asmussen, Jes
AU - Thareja, Raj K.
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2003/7/1
Y1 - 2003/7/1
N2 - Preparation of N-doped ZnO thin films was attempted using various co-doping methods. A ZnO:Ga (Ga2O3 of 5 wt.%) target was ablated in NO gas by pulsed laser deposition (PLD). In addition, a nitrogen ion gun and an ECR nitrogen plasma source were used as post-N-doping treatment of undoped ZnO films. Optical emission from elemental Zn I, Ga I and O I, as well as from N2 molecules, was identified in the plasma plume. The structural, optical and electrical properties of these synthesized films were investigated. All films show n-type conduction, with resistivity in the range 10-3-10-2 Ω cm and carrier density from 1017 to 1020 cm-3.
AB - Preparation of N-doped ZnO thin films was attempted using various co-doping methods. A ZnO:Ga (Ga2O3 of 5 wt.%) target was ablated in NO gas by pulsed laser deposition (PLD). In addition, a nitrogen ion gun and an ECR nitrogen plasma source were used as post-N-doping treatment of undoped ZnO films. Optical emission from elemental Zn I, Ga I and O I, as well as from N2 molecules, was identified in the plasma plume. The structural, optical and electrical properties of these synthesized films were investigated. All films show n-type conduction, with resistivity in the range 10-3-10-2 Ω cm and carrier density from 1017 to 1020 cm-3.
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U2 - 10.1016/S0040-6090(03)00383-3
DO - 10.1016/S0040-6090(03)00383-3
M3 - Conference article
AN - SCOPUS:0037671310
VL - 435
SP - 49
EP - 55
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1-2
T2 - Proccedings of the Joint International Plasma Symposium
Y2 - 1 July 2002 through 4 July 2002
ER -