Synthesis of p-type ZnO thin films using co-doping techniques based on KrF excimer laser deposition

Tamiko Ohshima, Tomoaki Ikegami, Kenji Ebihara, Jes Asmussen, Raj K. Thareja

研究成果: ジャーナルへの寄稿会議記事査読

58 被引用数 (Scopus)

抄録

Preparation of N-doped ZnO thin films was attempted using various co-doping methods. A ZnO:Ga (Ga2O3 of 5 wt.%) target was ablated in NO gas by pulsed laser deposition (PLD). In addition, a nitrogen ion gun and an ECR nitrogen plasma source were used as post-N-doping treatment of undoped ZnO films. Optical emission from elemental Zn I, Ga I and O I, as well as from N2 molecules, was identified in the plasma plume. The structural, optical and electrical properties of these synthesized films were investigated. All films show n-type conduction, with resistivity in the range 10-3-10-2 Ω cm and carrier density from 1017 to 1020 cm-3.

本文言語英語
ページ(範囲)49-55
ページ数7
ジャーナルThin Solid Films
435
1-2
DOI
出版ステータス出版済み - 7月 1 2003
外部発表はい
イベントProccedings of the Joint International Plasma Symposium - Jeju Island, 韓国
継続期間: 7月 1 20027月 4 2002

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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