Synthesis of phosphorus-doped homoepitaxial diamond by microwave plasma-assisted chemical vapor deposition using triethylphosphine as the dopant

T. Saito, M. Kameta, K. Kusakabe, S. Morooka, H. Maeda, T. Asano

研究成果: ジャーナルへの寄稿学術誌査読

4 被引用数 (Scopus)

抄録

Triethylphosphine [TEP, P(C2H5)3] was used as a dopant for homoepitaxial (100) and (111) phosphorus-doped diamond films, which were formed by microwave plasma-assisted chemical vapor deposition using CH4 as the carbon source. The growth rate of TEP-doped (100) diamond increased with increasing atomic ratio of phosphorus to carbon in the gas phase, from 300 nm h-1 at 0 ppm to 800 nm h-1 at 10 000 ppm at 850 °C. TEP-doped (100) diamond films deposited at temperatures below 850 °C were smooth and homoepitaxial, whereas those deposited above 950 °C as well as the TEP-doped (111) films formed at 750-1050 °C were polycrystalline. Phosphorus was found to be uniformly incorporated into the diamond film, as evidenced by secondary ion mass spectrometry. The Hall conductivity of the TEP-doped films remained low.

本文言語英語
ページ(範囲)560-564
ページ数5
ジャーナルDiamond and Related Materials
7
2-5
DOI
出版ステータス出版済み - 2月 1998

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 化学 (全般)
  • 機械工学
  • 材料化学
  • 電子工学および電気工学

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