Synthesis of platinum silicide at platinum/silicon oxide interface by photon irradiation

K. Sato; H. Yasuda; S. Ichikawa; M. Imamura; K. Takahashi; S. Hata; S. Matsumura; S. Anada; J. G. Lee; H. Mori

doi:10.1016/j.actamat.2018.05.045

Synthesis of platinum silicide at platinum/silicon oxide interface by photon irradiation

K. Sato, H. Yasuda, S. Ichikawa, M. Imamura, K. Takahashi, S. Hata, S. Matsumura, S. Anada, J. G. Lee, H. Mori

研究成果: Contribution to journal › Article

抜粋

The synthesis of platinum silicide at a Pt/SiO_x interface by photon irradiation was investigated using transmission electron microscopy. A platinum silicide, Pt₂Si, was successfully formed at the Pt/SiO_x interface by irradiation with 680 and 140 eV photons, but not by irradiation with 80 eV photons. Silicide formation was also induced by irradiation with electrons of energy 75 keV. The amount of silicide formed by photon irradiation was lower than the amount obtained by electron irradiation. Silicide formation by both photon and electron irradiation was accompanied by Si depletion in amorphous SiO_x. The experimental results indicate that silicide formation is induced by electronic excitation. A possible mechanism for silicide formation is proposed on the basis of the results.

元の言語	英語
ページ（範囲）	284-294
ページ数	11
ジャーナル	Acta Materialia
巻	154
DOI	https://doi.org/10.1016/j.actamat.2018.05.045
出版物ステータス	出版済み - 8 1 2018

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Polymers and Plastics
Metals and Alloys

文献にアクセス

10.1016/j.actamat.2018.05.045

フィンガープリント Synthesis of platinum silicide at platinum/silicon oxide interface by photon irradiation' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

これを引用

Sato, K., Yasuda, H., Ichikawa, S., Imamura, M., Takahashi, K., Hata, S., Matsumura, S., Anada, S., Lee, J. G., & Mori, H. (2018). Synthesis of platinum silicide at platinum/silicon oxide interface by photon irradiation. Acta Materialia, 154, 284-294. https://doi.org/10.1016/j.actamat.2018.05.045

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title = "Synthesis of platinum silicide at platinum/silicon oxide interface by photon irradiation",

abstract = "The synthesis of platinum silicide at a Pt/SiOx interface by photon irradiation was investigated using transmission electron microscopy. A platinum silicide, Pt2Si, was successfully formed at the Pt/SiOx interface by irradiation with 680 and 140 eV photons, but not by irradiation with 80 eV photons. Silicide formation was also induced by irradiation with electrons of energy 75 keV. The amount of silicide formed by photon irradiation was lower than the amount obtained by electron irradiation. Silicide formation by both photon and electron irradiation was accompanied by Si depletion in amorphous SiOx. The experimental results indicate that silicide formation is induced by electronic excitation. A possible mechanism for silicide formation is proposed on the basis of the results.",

author = "K. Sato and H. Yasuda and S. Ichikawa and M. Imamura and K. Takahashi and S. Hata and S. Matsumura and S. Anada and Lee, {J. G.} and H. Mori",

year = "2018",

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doi = "10.1016/j.actamat.2018.05.045",

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T1 - Synthesis of platinum silicide at platinum/silicon oxide interface by photon irradiation

AU - Sato, K.

AU - Yasuda, H.

AU - Ichikawa, S.

AU - Imamura, M.

AU - Takahashi, K.

AU - Hata, S.

AU - Matsumura, S.

AU - Anada, S.

AU - Lee, J. G.

AU - Mori, H.

PY - 2018/8/1

Y1 - 2018/8/1

N2 - The synthesis of platinum silicide at a Pt/SiOx interface by photon irradiation was investigated using transmission electron microscopy. A platinum silicide, Pt2Si, was successfully formed at the Pt/SiOx interface by irradiation with 680 and 140 eV photons, but not by irradiation with 80 eV photons. Silicide formation was also induced by irradiation with electrons of energy 75 keV. The amount of silicide formed by photon irradiation was lower than the amount obtained by electron irradiation. Silicide formation by both photon and electron irradiation was accompanied by Si depletion in amorphous SiOx. The experimental results indicate that silicide formation is induced by electronic excitation. A possible mechanism for silicide formation is proposed on the basis of the results.

AB - The synthesis of platinum silicide at a Pt/SiOx interface by photon irradiation was investigated using transmission electron microscopy. A platinum silicide, Pt2Si, was successfully formed at the Pt/SiOx interface by irradiation with 680 and 140 eV photons, but not by irradiation with 80 eV photons. Silicide formation was also induced by irradiation with electrons of energy 75 keV. The amount of silicide formed by photon irradiation was lower than the amount obtained by electron irradiation. Silicide formation by both photon and electron irradiation was accompanied by Si depletion in amorphous SiOx. The experimental results indicate that silicide formation is induced by electronic excitation. A possible mechanism for silicide formation is proposed on the basis of the results.

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