Synthesis of platinum silicide at platinum/silicon oxide interface by photon irradiation

K. Sato, H. Yasuda, S. Ichikawa, M. Imamura, K. Takahashi, S. Hata, S. Matsumura, S. Anada, J. G. Lee, H. Mori

研究成果: Contribution to journalArticle

抜粋

The synthesis of platinum silicide at a Pt/SiOx interface by photon irradiation was investigated using transmission electron microscopy. A platinum silicide, Pt2Si, was successfully formed at the Pt/SiOx interface by irradiation with 680 and 140 eV photons, but not by irradiation with 80 eV photons. Silicide formation was also induced by irradiation with electrons of energy 75 keV. The amount of silicide formed by photon irradiation was lower than the amount obtained by electron irradiation. Silicide formation by both photon and electron irradiation was accompanied by Si depletion in amorphous SiOx. The experimental results indicate that silicide formation is induced by electronic excitation. A possible mechanism for silicide formation is proposed on the basis of the results.

元の言語英語
ページ(範囲)284-294
ページ数11
ジャーナルActa Materialia
154
DOI
出版物ステータス出版済み - 8 1 2018

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Polymers and Plastics
  • Metals and Alloys

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    Sato, K., Yasuda, H., Ichikawa, S., Imamura, M., Takahashi, K., Hata, S., Matsumura, S., Anada, S., Lee, J. G., & Mori, H. (2018). Synthesis of platinum silicide at platinum/silicon oxide interface by photon irradiation. Acta Materialia, 154, 284-294. https://doi.org/10.1016/j.actamat.2018.05.045