Synthesis of platinum silicide at platinum/silicon oxide interface by photon irradiation

K. Sato; H. Yasuda; S. Ichikawa; M. Imamura; K. Takahashi; S. Hata; S. Matsumura; S. Anada; J. G. Lee; H. Mori

doi:10.1016/j.actamat.2018.05.045

Synthesis of platinum silicide at platinum/silicon oxide interface by photon irradiation

K. Sato, H. Yasuda, S. Ichikawa, M. Imamura, K. Takahashi, S. Hata, S. Matsumura, S. Anada, J. G. Lee, H. Mori

研究成果: Contribution to journal › Article › 査読

2 被引用数 (Scopus)

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The synthesis of platinum silicide at a Pt/SiO_x interface by photon irradiation was investigated using transmission electron microscopy. A platinum silicide, Pt₂Si, was successfully formed at the Pt/SiO_x interface by irradiation with 680 and 140 eV photons, but not by irradiation with 80 eV photons. Silicide formation was also induced by irradiation with electrons of energy 75 keV. The amount of silicide formed by photon irradiation was lower than the amount obtained by electron irradiation. Silicide formation by both photon and electron irradiation was accompanied by Si depletion in amorphous SiO_x. The experimental results indicate that silicide formation is induced by electronic excitation. A possible mechanism for silicide formation is proposed on the basis of the results.

本文言語	英語
ページ（範囲）	284-294
ページ数	11
ジャーナル	Acta Materialia
巻	154
DOI	https://doi.org/10.1016/j.actamat.2018.05.045
出版ステータス	出版済み - 8 1 2018

All Science Journal Classification (ASJC) codes

電子材料、光学材料、および磁性材料
セラミックおよび複合材料
ポリマーおよびプラスチック
金属および合金

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10.1016/j.actamat.2018.05.045

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@article{9d0fcd3827824a05924370044e5b6f64,

title = "Synthesis of platinum silicide at platinum/silicon oxide interface by photon irradiation",

abstract = "The synthesis of platinum silicide at a Pt/SiOx interface by photon irradiation was investigated using transmission electron microscopy. A platinum silicide, Pt2Si, was successfully formed at the Pt/SiOx interface by irradiation with 680 and 140 eV photons, but not by irradiation with 80 eV photons. Silicide formation was also induced by irradiation with electrons of energy 75 keV. The amount of silicide formed by photon irradiation was lower than the amount obtained by electron irradiation. Silicide formation by both photon and electron irradiation was accompanied by Si depletion in amorphous SiOx. The experimental results indicate that silicide formation is induced by electronic excitation. A possible mechanism for silicide formation is proposed on the basis of the results.",

author = "K. Sato and H. Yasuda and S. Ichikawa and M. Imamura and K. Takahashi and S. Hata and S. Matsumura and S. Anada and Lee, {J. G.} and H. Mori",

note = "Funding Information: Part of this work was supported by the program Advanced Research Network for Ultra-Microscopic Science ( FY2016– ), from the Ministry of Education, Culture, Sports, Science, and Technology (MEXT), Japan . We thank Helen McPherson, PhD, for editing a draft of this manuscript. Publisher Copyright: {\textcopyright} 2018 Acta Materialia Inc.",

year = "2018",

month = aug,

day = "1",

doi = "10.1016/j.actamat.2018.05.045",

language = "English",

volume = "154",

pages = "284--294",

journal = "Acta Materialia",

issn = "1359-6454",

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TY - JOUR

T1 - Synthesis of platinum silicide at platinum/silicon oxide interface by photon irradiation

AU - Sato, K.

AU - Yasuda, H.

AU - Ichikawa, S.

AU - Imamura, M.

AU - Takahashi, K.

AU - Hata, S.

AU - Matsumura, S.

AU - Anada, S.

AU - Lee, J. G.

AU - Mori, H.

N1 - Funding Information: Part of this work was supported by the program Advanced Research Network for Ultra-Microscopic Science ( FY2016– ), from the Ministry of Education, Culture, Sports, Science, and Technology (MEXT), Japan . We thank Helen McPherson, PhD, for editing a draft of this manuscript. Publisher Copyright: © 2018 Acta Materialia Inc.

PY - 2018/8/1

Y1 - 2018/8/1

N2 - The synthesis of platinum silicide at a Pt/SiOx interface by photon irradiation was investigated using transmission electron microscopy. A platinum silicide, Pt2Si, was successfully formed at the Pt/SiOx interface by irradiation with 680 and 140 eV photons, but not by irradiation with 80 eV photons. Silicide formation was also induced by irradiation with electrons of energy 75 keV. The amount of silicide formed by photon irradiation was lower than the amount obtained by electron irradiation. Silicide formation by both photon and electron irradiation was accompanied by Si depletion in amorphous SiOx. The experimental results indicate that silicide formation is induced by electronic excitation. A possible mechanism for silicide formation is proposed on the basis of the results.

AB - The synthesis of platinum silicide at a Pt/SiOx interface by photon irradiation was investigated using transmission electron microscopy. A platinum silicide, Pt2Si, was successfully formed at the Pt/SiOx interface by irradiation with 680 and 140 eV photons, but not by irradiation with 80 eV photons. Silicide formation was also induced by irradiation with electrons of energy 75 keV. The amount of silicide formed by photon irradiation was lower than the amount obtained by electron irradiation. Silicide formation by both photon and electron irradiation was accompanied by Si depletion in amorphous SiOx. The experimental results indicate that silicide formation is induced by electronic excitation. A possible mechanism for silicide formation is proposed on the basis of the results.

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UR - http://www.scopus.com/inward/citedby.url?scp=85047439477&partnerID=8YFLogxK

U2 - 10.1016/j.actamat.2018.05.045

DO - 10.1016/j.actamat.2018.05.045

M3 - Article

AN - SCOPUS:85047439477

VL - 154

SP - 284

EP - 294

JO - Acta Materialia

JF - Acta Materialia

SN - 1359-6454

ER -

Synthesis of platinum silicide at platinum/silicon oxide interface by photon irradiation

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