Synthesis of Sb-doped ZnO microspheres by pulsed laser ablation and their photoluminescence properties

T. Tanaka, T. Shimogaki, F. Nagasaki, M. Higashihata, Daisuke Nakamura, Hiroshi Ikenoue, T. Okada

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

3 被引用数 (Scopus)

抄録

We succeeded in synthesizing antimony (Sb)-doped ZnO microspheres by ablating a ZnO sintered target containing 5 wt% of Sb with a Nd:YAG laser at a fluence of 25 J/cm 2 in air. The well-spherical ZnO microcrystals with diameters of 1-20 μm were collected on a substrate which was put near the ablation spot. Most of the ZnO microspheres have a crystalline structure. In addition, Raman peak of the Sb-doped ZnO microspheres was shifted toward lower frequency side, indicating substitutional Sb 3+ at Zn antisite. Room-temperature photoluminescence properties of the microsphere were investigated under 325 nm He-Cd laser or 355 nm Nd:YAG laser excitation. An ultraviolet (UV) emission and lasing in whispering gallery mode were observed from the photoexcited microsphere.

本文言語英語
ホスト出版物のタイトルLaser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX
編集者Stephan Roth, Xianfan Xu, Yoshiki Nakata, Beat Neuenschwander
出版社SPIE
ISBN(電子版)9781628414400
DOI
出版ステータス出版済み - 1月 1 2015
イベントLaser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX - San Francisco, 米国
継続期間: 2月 9 20152月 12 2015

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
9350
ISSN(印刷版)0277-786X
ISSN(電子版)1996-756X

その他

その他Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX
国/地域米国
CitySan Francisco
Period2/9/152/12/15

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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