Synthesis of Si-C-N amorphous powder by imide method and its crystallization behavior

M. Uehara, K. Washio, N. Enomoto, J. Hojo

    研究成果: ジャーナルへの寄稿学術誌査読

    抄録

    The imide powders of Si-C-N-H system were formed by liquid phase reaction in SiCl4-CH3SiCl3-NH3 or SiCl4-(C2H5)2NH system in n-hexane and decomposed at 900°C in vacuum to amorphous powder of Si-C-N system. The powders were heat-treated in N2 at 1400 - 1800°C. Si3N4 was crystallized above 1500°C and SiC was formed at higher temperatures. The formation temperature of SiC lowered with an increase of the carbon content in the synthesis system. The SEM-EDX indicated that the detected carbon content was small, when Si3N4 phase was predominant, and increased according to SiC formation at high temperatures. This means that carbon may be included inside Si3N4 particles, reacting with Si3N4 to form SiC at higher temperatures. This results suggests that Si3N4-SiC composite can be fabricated from the Si-C-N amorphous powder by optimizing starting materials and heat treatment condition.

    本文言語英語
    ページ(範囲)854-857
    ページ数4
    ジャーナルFuntai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy
    48
    9
    DOI
    出版ステータス出版済み - 9月 2001

    All Science Journal Classification (ASJC) codes

    • 機械工学
    • 産業および生産工学
    • 金属および合金
    • 材料化学

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