Synthetic Rashba spin–orbit system using a silicon metal-oxide semiconductor

Soobeom Lee, Hayato Koike, Minori Goto, Shinji Miwa, Yoshishige Suzuki, Naoto Yamashita, Ryo Ohshima, Ei Shigematsu, Yuichiro Ando, Masashi Shiraishi

研究成果: Contribution to journalArticle査読

1 被引用数 (Scopus)

抄録

The spin–orbit interaction (SOI), mainly manifesting itself in heavy elements and compound materials, has been attracting much attention as a means of manipulating and/or converting a spin degree of freedom. Here, we show that a Si metal-oxide- semiconductor (MOS) heterostructure possesses Rashba-type SOI, although Si is a light element and has lattice inversion symmetry resulting in inherently negligible SOI in bulk form. When a strong gate electric field is applied to the Si MOS, we observe spin lifetime anisotropy of propagating spins in the Si through the formation of an emergent effective magnetic field due to the SOI. Furthermore, the Rashba parameter α in the system increases linearly up to 9.8 × 10−16 eV m for a gate electric field of 0.5 V nm−1; that is, it is gate tuneable and the spin splitting of 0.6 μeV is relatively large. Our finding establishes a family of spin–orbit systems.

本文言語英語
ページ(範囲)1228-1232
ページ数5
ジャーナルNature Materials
20
9
DOI
出版ステータス出版済み - 9 2021
外部発表はい

All Science Journal Classification (ASJC) codes

  • 化学 (全般)
  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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