Systematic theoretical investigations of adsorption behavior on the GaAs(0 0 l)-c(4 × 4) surfaces

Tomonori Ito, Kazumi Tsutsumida, Kohji Nakamura, Yoshihiro Kangawa, Kenji Shiraishi, Akihito Taguchi, Hiroyuki Kageshima

研究成果: Contribution to journalArticle査読

21 被引用数 (Scopus)

抄録

Adsorption behavior on the GaAs(0 0 l)-c(4 × 4) surfaces is systematically investigated by using our ab initio-based approach and the Monte Carlo methods. The change in stable structure of the c(4 × 4) surfaces is clarified by considering adsorption or desorption of surface dimers as functions of temperature and As pressure. The calculated results imply that the c(4 × 4) surface with As dimers is stable at low temperatures less than ∼400 K, whereas the surface with Ga-As dimers is stabilized at high temperatures in the range of ∼400-700 K. The disordered dimer arrangements consisting of Ga and As substituted by each other in the c(4 × 4) unit cell hardly appear even at high temperatures such as -∼800 K. We also investigate the behavior of Ga and As adatoms on these c(4 × 4) surfaces. The calculated results reveal that Ga atoms can adsorb and migrate on the surfaces while desorption of As adatoms proceeds without sufficient migration. Therefore, Ga adatoms play an important role for the epitaxial growth of GaAs on the GaAs(0 0 l)-c(4 × 4) surface.

本文言語英語
ページ(範囲)194-199
ページ数6
ジャーナルApplied Surface Science
237
1-4
DOI
出版ステータス出版済み - 10 15 2004
外部発表はい

All Science Journal Classification (ASJC) codes

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

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