Tapered-surface etching of GaAs utilizing low-energy ion bombardment effect

Dong Ju Bai, Akiyoshi Baba, Atsushi Kenjo, Taizoh Sadoh, Hiroshi Nakashima, Hiroshi Mori, Toshio Tsurushima

研究成果: Contribution to journalArticle査読

抄録

A technique for fabricating tapered-surface structures on GaAs crystals is demonstrated. GaAs crystals are bombarded with low-energy (5 keV) Ar + ions, and the partially masked surfaces are etched with an aqueous solution of FeCl 3-HCl. Effect of the ion bombardmentenhanced etching is utilized to proceed a high-rate lateral etching under the mask, and to reveal a surface with a taper angle of 10-45°, depending on the ion dose.

本文言語英語
ページ(範囲)225-228
ページ数4
ジャーナルResearch Reports on Information Science and Electrical Engineering of Kyushu University
2
2
出版ステータス出版済み - 9 1 1997

All Science Journal Classification (ASJC) codes

  • Computer Science(all)
  • Electrical and Electronic Engineering

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