TEM characterization of Ge precipitates in an Al-1.6 at% Ge alloy

K. Kaneko, K. Inoke, K. Sato, K. Kitawaki, H. Higashida, I. Arslan, P. A. Midgley

    研究成果: Contribution to journalArticle査読

    45 被引用数 (Scopus)

    抄録

    The growth mechanism and morphology of Ge precipitates in an Al-Ge alloy was characterized by a combination of in-situ transmission electron microscopy, high-resolution transmission electron microscopy and three-dimensional electron tomography. Anisotropic growth of rod-shaped Ge precipitates was observed by in-situ transmission electron microscopy over different time periods, and faceting of the precipitates was clearly seen using high-resolution transmission electron microscopy and three-dimensional electron tomography. This anisotropic growth of rod-shaped Ge precipitates was enhanced by vacancy concentration as proposed previously, but also by surface diffusion as observed during the in-situ experiment. Furthermore, a variety of precipitate morphologies was identified by three-dimensional electron tomography.

    本文言語英語
    ページ(範囲)210-220
    ページ数11
    ジャーナルUltramicroscopy
    108
    3
    DOI
    出版ステータス出版済み - 2 2008

    All Science Journal Classification (ASJC) codes

    • 電子材料、光学材料、および磁性材料
    • 原子分子物理学および光学
    • 器械工学

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