TEM characterization of Ge precipitates in an Al-1.6 at% Ge alloy

K. Kaneko, K. Inoke, K. Sato, K. Kitawaki, H. Higashida, I. Arslan, P. A. Midgley

研究成果: Contribution to journalArticle査読

45 被引用数 (Scopus)

抄録

The growth mechanism and morphology of Ge precipitates in an Al-Ge alloy was characterized by a combination of in-situ transmission electron microscopy, high-resolution transmission electron microscopy and three-dimensional electron tomography. Anisotropic growth of rod-shaped Ge precipitates was observed by in-situ transmission electron microscopy over different time periods, and faceting of the precipitates was clearly seen using high-resolution transmission electron microscopy and three-dimensional electron tomography. This anisotropic growth of rod-shaped Ge precipitates was enhanced by vacancy concentration as proposed previously, but also by surface diffusion as observed during the in-situ experiment. Furthermore, a variety of precipitate morphologies was identified by three-dimensional electron tomography.

本文言語英語
ページ(範囲)210-220
ページ数11
ジャーナルUltramicroscopy
108
3
DOI
出版ステータス出版済み - 2 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Instrumentation

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