Temperature and energy dependences of capture cross sections at surface states in Si metal-oxide-semiconductor diodes measured by deep level transient spectroscopy

Teruaki Katsube, Koichi Kakimoto, Toshiaki Ikoma

研究成果: Contribution to journalArticle査読

66 被引用数 (Scopus)

抄録

A new deep level transient spectroscopy technique is presented to determine capture cross sections at metal-oxide semiconductor (MOS) surface states. The technique enables us to determine energy and temperature dependences of capture cross sections separately. Applying this method, electron capture cross sections at surface states in Si MOS diodes were measured and found to have strong energy dependence and rather weak temperature dependence. It was also found that there was an effect to increase the emission rate, which may be attributed to barrier lowering at the Si-SiO2 interface.

本文言語英語
ページ(範囲)3504-3508
ページ数5
ジャーナルJournal of Applied Physics
52
5
DOI
出版ステータス出版済み - 1981
外部発表はい

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(全般)

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