Temperature dependence of Eu 4f states in EuPd2Si2: Bulk-sensitive high-resolution photoemission study

Kojiro Mimura; Yukihiro Taguchi; Shuichi Fukuda; Akihiro Mitsuda; Junji Sakurai; Kouichi Ichikawa; Osamu Aita

doi:10.1016/j.physb.2004.06.030

Temperature dependence of Eu 4f states in EuPd₂Si₂: Bulk-sensitive high-resolution photoemission study

Kojiro Mimura, Yukihiro Taguchi, Shuichi Fukuda, Akihiro Mitsuda, Junji Sakurai, Kouichi Ichikawa, Osamu Aita

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

7 被引用数 (Scopus)

抄録

Eu 4f states in EuPd₂Si₂ have been investigated by bulk-sensitive high-resolution photoemission spectroscopy at temperatures from 20 to 300K. A bulk Eu²⁺ 4f component is definitely distinguished from two surface components. As the temperature is increasing, the spectral intensity of bulk Eu²⁺ drastically increases around 150K, while that of bulk Eu³⁺ decreases. The bulk Eu³⁺ 4f component is shifted by 0.2eV from 100 to 200K. The changes associated with the valence transition of EuPd₂Si₂ are thus successfully observed in the temperature-dependent photoemission spectra.

本文言語	英語
ページ（範囲）	292-294
ページ数	3
ジャーナル	Physica B: Condensed Matter
巻	351
号	3-4
DOI	https://doi.org/10.1016/j.physb.2004.06.030
出版ステータス	出版済み - 9月 15 2004
外部発表	はい

!!!All Science Journal Classification (ASJC) codes

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学

文献へのアクセス

10.1016/j.physb.2004.06.030

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引用スタイル

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title = "Temperature dependence of Eu 4f states in EuPd2Si2: Bulk-sensitive high-resolution photoemission study",

abstract = "Eu 4f states in EuPd2Si2 have been investigated by bulk-sensitive high-resolution photoemission spectroscopy at temperatures from 20 to 300K. A bulk Eu2+ 4f component is definitely distinguished from two surface components. As the temperature is increasing, the spectral intensity of bulk Eu2+ drastically increases around 150K, while that of bulk Eu3+ decreases. The bulk Eu3+ 4f component is shifted by 0.2eV from 100 to 200K. The changes associated with the valence transition of EuPd2Si2 are thus successfully observed in the temperature-dependent photoemission spectra.",

author = "Kojiro Mimura and Yukihiro Taguchi and Shuichi Fukuda and Akihiro Mitsuda and Junji Sakurai and Kouichi Ichikawa and Osamu Aita",

year = "2004",

month = sep,

day = "15",

doi = "10.1016/j.physb.2004.06.030",

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T1 - Temperature dependence of Eu 4f states in EuPd2Si2

T2 - Bulk-sensitive high-resolution photoemission study

AU - Mimura, Kojiro

AU - Taguchi, Yukihiro

AU - Fukuda, Shuichi

AU - Mitsuda, Akihiro

AU - Sakurai, Junji

AU - Ichikawa, Kouichi

AU - Aita, Osamu

PY - 2004/9/15

Y1 - 2004/9/15

N2 - Eu 4f states in EuPd2Si2 have been investigated by bulk-sensitive high-resolution photoemission spectroscopy at temperatures from 20 to 300K. A bulk Eu2+ 4f component is definitely distinguished from two surface components. As the temperature is increasing, the spectral intensity of bulk Eu2+ drastically increases around 150K, while that of bulk Eu3+ decreases. The bulk Eu3+ 4f component is shifted by 0.2eV from 100 to 200K. The changes associated with the valence transition of EuPd2Si2 are thus successfully observed in the temperature-dependent photoemission spectra.

AB - Eu 4f states in EuPd2Si2 have been investigated by bulk-sensitive high-resolution photoemission spectroscopy at temperatures from 20 to 300K. A bulk Eu2+ 4f component is definitely distinguished from two surface components. As the temperature is increasing, the spectral intensity of bulk Eu2+ drastically increases around 150K, while that of bulk Eu3+ decreases. The bulk Eu3+ 4f component is shifted by 0.2eV from 100 to 200K. The changes associated with the valence transition of EuPd2Si2 are thus successfully observed in the temperature-dependent photoemission spectra.

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