Temperature-dependent current-voltage characteristics and ultraviolet light detection of heterojunction diodes comprising n-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite films and p-type silicon substrates

研究成果: ジャーナルへの寄稿学術誌査読

9 被引用数 (Scopus)

抄録

Heterojunction diodes comprising poorly (1 at. %) nitrogen-doped n-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films and p-type Si substrates were prepared in nitrogen and hydrogen mixed gas atmosphere by coaxial arc plasma deposition. Dark current density-voltage (J-V) characteristics were studied in the temperature range of 200-400 K, in order to investigate the current transport mechanism through the fabricated heterojunctions. The temperature dependence of the ideality factor and reverse saturation current reveals that carrier transport predominantly occurs in the generation-recombination mechanism and, at low temperatures, it accompanies tunneling via weak traps. The heterojunctions surely exhibited photodetection for 254nm ultraviolet light illumination. It is expected that photocarriers will be generated at UNCD grains and transported through an a-C:H matrix.

本文言語英語
論文番号07KD04
ジャーナルJapanese journal of applied physics
56
7
DOI
出版ステータス出版済み - 7月 2017

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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