Temperature dependent current-voltage characteristics of n-type nanocrystalline-FeSi2/p-type Si heterojunctions fabricated by pulsed laser deposition

Nathaporn Promros, Ryuhei Iwasaki, Suguru Funasaki, Kyohei Yamashita, Chen Li, Tsuyoshi Yoshitake

    研究成果: Chapter in Book/Report/Conference proceedingConference contribution

    抄録

    n-Type NC-FeSi2/p-type Si heterojunctions were successfully fabricated by PLD, and their forward current-voltage characteristics were analyzed on the basis of thermionic emission theory (TE) in the temperature range from 300 down to 77 K. With a decrease in the temperature, the ideality factor was increased while the zero-bias barrier height was decreased. The calculated values of ideality factor and barrier height were 3.07 and 0.63 eV at 300 K and 10.75 and 0.23 eV at 77 K. The large value of ideality factor indicated that a tunneling process contributes to the carrier transport mechanisms in the NC-FeSi2 films. The series resistance, which was estimated by Cheung's method, was strongly dependent on temperature. At 300 K, the value of series resistance was 12.44 Ω and it was dramatically enhanced to be 1.71× 105 Ω at 77 K.

    本文言語英語
    ホスト出版物のタイトルFrontiers in Materials and Minerals Engineering
    ページ171-176
    ページ数6
    DOI
    出版ステータス出版済み - 2014
    イベント5th Regional Conference on Materials Engineering and the 5th Regional Conference on Natural Resources and Materials 2013, RCM5 and RCNRM5 2013 - , マレーシア
    継続期間: 1 22 20131 23 2013

    出版物シリーズ

    名前Advanced Materials Research
    858
    ISSN(印刷版)1022-6680

    その他

    その他5th Regional Conference on Materials Engineering and the 5th Regional Conference on Natural Resources and Materials 2013, RCM5 and RCNRM5 2013
    Countryマレーシア
    Period1/22/131/23/13

    All Science Journal Classification (ASJC) codes

    • Engineering(all)

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