TY - JOUR
T1 - Temperature dependent epitaxial growth of ferromagnetic silicide Fe3Si on Ge substrate
AU - Ueda, Koji
AU - Sadoh, Taizoh
AU - Ando, Yuichiro
AU - Jonishi, Takahumi
AU - Narumi, Kazumasa
AU - Maeda, Yoshihito
AU - Miyao, Masanobu
N1 - Funding Information:
We are very grateful to T. Enokida of Fukuryo Semicon Engineering for TEM observations and RBS measurements. This work was partly supported by a Grant-in-Aid for Scientific Research on Priority Area (No.18063018) from the Ministry of Education, Culture, Sports, Science, and Technology in Japan.
PY - 2008/11/3
Y1 - 2008/11/3
N2 - Influences of growth temperature on low-temperature (60-400 °C) molecular beam epitaxy of the ferromagnetic silicide Fe3Si layer on Ge substrates were investigated. X-ray diffraction and reflective high-energy electron diffraction measurements suggested that Fe3Si layers were epitaxially grown on Ge at a temperature between 60 and 300 °C, while another phase layer was epitaxially grown at 400 °C. Rutherford backscattering spectroscopy measurements revealed that Ge atoms began to diffuse into the Fe3Si layers above 300 °C, and the FeSiGe layer was formed at 400 °C. As a result, very low value (4.0%) of the minimum scattering yield (χmin) of the Fe3Si layers was obtained at 130 °C. Transmission electron microscopy measurements indicated that the interface of Fe3Si and Ge was atomically flat. In addition, analysis of the electron diffraction patterns of epitaxial Fe3Si layers confirmed the formation of DO3-type Fe3Si.
AB - Influences of growth temperature on low-temperature (60-400 °C) molecular beam epitaxy of the ferromagnetic silicide Fe3Si layer on Ge substrates were investigated. X-ray diffraction and reflective high-energy electron diffraction measurements suggested that Fe3Si layers were epitaxially grown on Ge at a temperature between 60 and 300 °C, while another phase layer was epitaxially grown at 400 °C. Rutherford backscattering spectroscopy measurements revealed that Ge atoms began to diffuse into the Fe3Si layers above 300 °C, and the FeSiGe layer was formed at 400 °C. As a result, very low value (4.0%) of the minimum scattering yield (χmin) of the Fe3Si layers was obtained at 130 °C. Transmission electron microscopy measurements indicated that the interface of Fe3Si and Ge was atomically flat. In addition, analysis of the electron diffraction patterns of epitaxial Fe3Si layers confirmed the formation of DO3-type Fe3Si.
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U2 - 10.1016/j.tsf.2008.08.110
DO - 10.1016/j.tsf.2008.08.110
M3 - Article
AN - SCOPUS:54849411856
VL - 517
SP - 422
EP - 424
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1
ER -