Metal-induced lateral crystallization (MILC) of amorphous SiGe films on Si O2 has been investigated as a function of Ge fraction (0%-100%) and annealing temperature (320-550 °C). High temperature annealing (>500 °C) caused spontaneous nucleation in amorphous SiGe with a high Ge fraction (>70%). This suppressed the progress of MILC. Spontaneous nucleation was significantly suppressed by lowering the annealing temperature (<400 °C). As a result, large poly-SiGe regions (>20 μm) were observed around Ni patterns even for high Ge fractions (>70%). In this way, MILC of amorphous SiGe was achieved for samples with whole Ge fractions (0%-100%).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)