The electrical properties at the GaN(0001)/AlGaN(0001) heterointerface have been investigated. Capacitance-voltage measurement and theoretical simulation results verify the existence of a two-dimensional (2D) hole gas, which is highly confined to the GaN/AlGaN interface with a peak carrier density of over 10 19 cm-3. Hall-effect measurements in the 80-460 K temperature range reveal that the 2D hole gas has zero activation energy and positive sheet-resistance temperature coefficients.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)