Temperature-induced valence transition in EuNi2(Si 0.20Ge0.80)2 studied by hard X-ray photoemission spectroscopy

Kazuya Yamamoto, Nozomu Kamakura, Munetaka Taguchi, Ashish Chainani, Yasutaka Takata, Koji Horiba, Shik Shin, Eiji Ikenaga, Kojiro Mimura, Masayuki Shiga, Hirofumi Wada, Hirofumi Namatame, Masaki Taniguchi, Mitsuhiro Awaji, Akihisa Takeuchi, Yoshinori Nishino, Daigo Miwa, Kenji Tamasaku, Tetsuya Ishikawa, Keisuke Kobayashi

研究成果: Contribution to journalArticle査読

5 被引用数 (Scopus)

抄録

The temperature-induced mixed valence transition in EuNi 2(Si0.20Ge0.80)2 has been investigated by hard X-ray (5940 eV) photoemission spectroscopy (HX-PES) for fractured surfaces, with a probing depth larger than 5 nm. The Eu 3d core-level states are studied below and above the critical valence transition temperature, Tv = 80 K. The HX-PES spectra at 40 and 120 K show the mixed valence transition, with clear changes in the divalent and trivalent Eu 3d chemically shifted features. The Eu 3d HX-PES spectra indicate a mean valence of 2.70 ± 0.03 at 40 K which changes to 2.40 ± 0.03 at 120 K, in good accordance with the results of bulk EuIII-edge X-ray absorption spectroscopy measurements.

本文言語英語
ページ(範囲)553-555
ページ数3
ジャーナルJournal of Electron Spectroscopy and Related Phenomena
144-147
DOI
出版ステータス出版済み - 6 1 2005
外部発表はい

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry

フィンガープリント 「Temperature-induced valence transition in EuNi<sub>2</sub>(Si <sub>0.20</sub>Ge<sub>0.80</sub>)<sub>2</sub> studied by hard X-ray photoemission spectroscopy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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