Temperature-induced valence transition in EuNi2(Si1–xGex)2 investigated by high-energy resolution fluorescence detection X-ray absorption spectroscopy

Ryohei Shimokasa, Naomi Kawamura, Takayuki Matsumoto, Koki Kawakami, Taku Kawabata, Gen Isumi, Takayuki Uozumi, Akihiro Mitsuda, Hirofumi Wada, Masaichiro Mizumaki, Kojiro Mimura

研究成果: Contribution to journalArticle査読

1 被引用数 (Scopus)

抄録

Electronic structures of the temperature-induced valence transition system EuNi2(Si1–xGex)2 with x = 0.70, 0.79, 0.82 have been investigated by means of high-energy resolution fluorescence detection X-ray absorption spectroscopy (HERFD-XAS). The HERFD-XAS spectra clearly change their intensities of Eu2+ and Eu3+ components which directly reflect the temperature-induced valence transition. For x = 0.70, gradual spectral change exhibits a continuous valence transition, while drastic changes for x = 0.79 and 0.82 indicate first-order valence transitions. High-energy resolution measurements made it possible to observe additional fine structures which are recognized more clearly below the transition temperature. Existence of these fine structures suggests that many-body effect plays an important role in the temperature-induced valence transition of this system. The variation of Eu mean valence estimated from the HERFD-XAS spectra for each x correlates with that of magnetic susceptibility.

本文言語英語
論文番号108150
ジャーナルRadiation Physics and Chemistry
175
DOI
出版ステータス出版済み - 10 2020

All Science Journal Classification (ASJC) codes

  • Radiation

フィンガープリント 「Temperature-induced valence transition in EuNi<sub>2</sub>(Si<sub>1–x</sub>Ge<sub>x</sub>)<sub>2</sub> investigated by high-energy resolution fluorescence detection X-ray absorption spectroscopy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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