The effect of boron/antimony on the brittle-to-ductile transition in silicon single crystals

Masaki Tanaka, Keiki Maeno, Kenji Higashida

研究成果: Contribution to journalArticle査読

7 被引用数 (Scopus)

抄録

The brittle-to-ductile transition (BDT) in boron or antimony doped Czochralski (CZ) silicon single crystals was investigated by three-point bending. The temperature dependence of the apparent fracture toughness was measured in three different crosshead speeds, indicating that the BDT temperature in boron doped silicon is the same as that in non-doped one while the BDT temperature in antimony doped silicon is lower than that in non-doped one. The activation energy was obtained from the deformation rate dependence of the BDT temperature, suggesting that the dislocation velocity in boron doped silicon is the same as that in non-doped while the dislocation velocity in antimony doped is larger than that in non-doped one.

本文言語英語
ページ(範囲)1206-1209
ページ数4
ジャーナルMaterials Transactions
51
7
DOI
出版ステータス出版済み - 7 2010

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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