The effect of dopants on the brittle-to-ductile transition in silicon single crystals

Youn Jeong Hong, Masaki Tanaka, Keiki Maeno, Kenji Higashida

    研究成果: Contribution to journalArticle査読

    1 被引用数 (Scopus)

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    The brittle-to-ductile transition (BDT) in boron, antimony and arsenic doped Cz silicon crystals has been experimentally studied, respectively. The BDT temperatures in antimony and arsenic doped silicon wafers are lower than that in a non-doped wafer while the BDT temperature in a boron doped wafer is almost the same as that in the non-doped wafer. The activation energy was obtained from the strain rate dependence of the BDT temperature. It was found that the values of the activation energy in the antimony and arsenic doped wafers are lower than that in the non-doped and boron doped wafers, indicating that the dislocation velocity in the antimony and arsenic doped silicon is faster than that in the non-doped while the dislocation velocity in the boron doped is the same as that in the non-doped. The effect of increasing in dislocation velocity on the BDT temperature was calculated by two-dimensional discrete dislocation dynamics simulations, indicating that the increasing in dislocation velocity decreases the BDT temperature in silicon single crystals.

    本文言語英語
    論文番号012141
    ジャーナルJournal of Physics: Conference Series
    240
    DOI
    出版ステータス出版済み - 2010

    All Science Journal Classification (ASJC) codes

    • 物理学および天文学(全般)

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