The effect of the H2/(H2 + Ar) flow-rate ratio on hydrogenated amorphous carbon films grown using Ar/H2/C7H8 plasma chemical vapor deposition

Taojun Fang; Kenji Yamaki; Kazunori Koga; Daisuke Yamashita; Hyunwoong Seo; Naho Itagaki; Masaharu Shiratani; Kosuke Takenaka; Yuichi Setsuhara

doi:10.1016/j.tsf.2018.02.035

The effect of the H₂/(H₂ + Ar) flow-rate ratio on hydrogenated amorphous carbon films grown using Ar/H₂/C₇H₈ plasma chemical vapor deposition

Taojun Fang, Kenji Yamaki, Kazunori Koga, Daisuke Yamashita, Hyunwoong Seo, Naho Itagaki, Masaharu Shiratani, Kosuke Takenaka, Yuichi Setsuhara

電子デバイス工学

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

3 被引用数 (Scopus)

抄録

To produce hydrogenated amorphous carbon (a-C:H) films with high mass density at a high deposition rate and low substrate bias voltage, we deposited these films on a Si substrate by plasma chemical vapor deposition, using toluene as a source compound and varying the gas flow-rate ratio of H₂/(H₂ + Ar). By decreasing the gas flow-rate ratio from 55% to 11%, the hydrogen content in the films decreased, and the density of sp³ carbon atoms in the films increased, whereas their surface roughness increased. At the gas flow-rate ratio of 11%, we produced a-C:H films with a high bulk density of 1830 kg/m³ at a high deposition rate of 81.1 nm/min.

本文言語	英語
ページ（範囲）	891-898
ページ数	8
ジャーナル	Thin Solid Films
巻	660
DOI	https://doi.org/10.1016/j.tsf.2018.02.035
出版ステータス	出版済み - 8月 30 2018

!!!All Science Journal Classification (ASJC) codes

電子材料、光学材料、および磁性材料
表面および界面
表面、皮膜および薄膜
金属および合金
材料化学

文献へのアクセス

10.1016/j.tsf.2018.02.035

他のファイルとリンク

フィンガープリント

「The effect of the H₂/(H₂ + Ar) flow-rate ratio on hydrogenated amorphous carbon films grown using Ar/H₂/C₇H₈ plasma chemical vapor deposition」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

@article{c1949ce8cd22470aad5913cdc3c269a7,

title = "The effect of the H2/(H2 + Ar) flow-rate ratio on hydrogenated amorphous carbon films grown using Ar/H2/C7H8 plasma chemical vapor deposition",

abstract = "To produce hydrogenated amorphous carbon (a-C:H) films with high mass density at a high deposition rate and low substrate bias voltage, we deposited these films on a Si substrate by plasma chemical vapor deposition, using toluene as a source compound and varying the gas flow-rate ratio of H2/(H2 + Ar). By decreasing the gas flow-rate ratio from 55% to 11%, the hydrogen content in the films decreased, and the density of sp3 carbon atoms in the films increased, whereas their surface roughness increased. At the gas flow-rate ratio of 11%, we produced a-C:H films with a high bulk density of 1830 kg/m3 at a high deposition rate of 81.1 nm/min.",

author = "Taojun Fang and Kenji Yamaki and Kazunori Koga and Daisuke Yamashita and Hyunwoong Seo and Naho Itagaki and Masaharu Shiratani and Kosuke Takenaka and Yuichi Setsuhara",

note = "Funding Information: This work was partly supported by JSPS KAKENHI (Grant Number JP16K13922 ) and the Joining and Welding Research Institute of Osaka University . We thank Joshua Yearsley, MS, from Edanz Group ( www.edanzediting.com/ac ) for editing a draft of this manuscript.",

year = "2018",

month = aug,

day = "30",

doi = "10.1016/j.tsf.2018.02.035",

language = "English",

volume = "660",

pages = "891--898",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

TY - JOUR

T1 - The effect of the H2/(H2 + Ar) flow-rate ratio on hydrogenated amorphous carbon films grown using Ar/H2/C7H8 plasma chemical vapor deposition

AU - Fang, Taojun

AU - Yamaki, Kenji

AU - Koga, Kazunori

AU - Yamashita, Daisuke

AU - Seo, Hyunwoong

AU - Itagaki, Naho

AU - Shiratani, Masaharu

AU - Takenaka, Kosuke

AU - Setsuhara, Yuichi

N1 - Funding Information: This work was partly supported by JSPS KAKENHI (Grant Number JP16K13922 ) and the Joining and Welding Research Institute of Osaka University . We thank Joshua Yearsley, MS, from Edanz Group ( www.edanzediting.com/ac ) for editing a draft of this manuscript.

PY - 2018/8/30

Y1 - 2018/8/30

N2 - To produce hydrogenated amorphous carbon (a-C:H) films with high mass density at a high deposition rate and low substrate bias voltage, we deposited these films on a Si substrate by plasma chemical vapor deposition, using toluene as a source compound and varying the gas flow-rate ratio of H2/(H2 + Ar). By decreasing the gas flow-rate ratio from 55% to 11%, the hydrogen content in the films decreased, and the density of sp3 carbon atoms in the films increased, whereas their surface roughness increased. At the gas flow-rate ratio of 11%, we produced a-C:H films with a high bulk density of 1830 kg/m3 at a high deposition rate of 81.1 nm/min.

AB - To produce hydrogenated amorphous carbon (a-C:H) films with high mass density at a high deposition rate and low substrate bias voltage, we deposited these films on a Si substrate by plasma chemical vapor deposition, using toluene as a source compound and varying the gas flow-rate ratio of H2/(H2 + Ar). By decreasing the gas flow-rate ratio from 55% to 11%, the hydrogen content in the films decreased, and the density of sp3 carbon atoms in the films increased, whereas their surface roughness increased. At the gas flow-rate ratio of 11%, we produced a-C:H films with a high bulk density of 1830 kg/m3 at a high deposition rate of 81.1 nm/min.

UR - http://www.scopus.com/inward/record.url?scp=85042640028&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85042640028&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2018.02.035

DO - 10.1016/j.tsf.2018.02.035

M3 - Article

AN - SCOPUS:85042640028

SN - 0040-6090

VL - 660

SP - 891

EP - 898

JO - Thin Solid Films

JF - Thin Solid Films

ER -