The effect of the H2/(H2 + Ar) flow-rate ratio on hydrogenated amorphous carbon films grown using Ar/H2/C7H8 plasma chemical vapor deposition

Taojun Fang, Kenji Yamaki, Kazunori Koga, Daisuke Yamashita, Hyunwoong Seo, Naho Itagaki, Masaharu Shiratani, Kosuke Takenaka, Yuichi Setsuhara

研究成果: Contribution to journalArticle

抜粋

To produce hydrogenated amorphous carbon (a-C:H) films with high mass density at a high deposition rate and low substrate bias voltage, we deposited these films on a Si substrate by plasma chemical vapor deposition, using toluene as a source compound and varying the gas flow-rate ratio of H2/(H2 + Ar). By decreasing the gas flow-rate ratio from 55% to 11%, the hydrogen content in the films decreased, and the density of sp3 carbon atoms in the films increased, whereas their surface roughness increased. At the gas flow-rate ratio of 11%, we produced a-C:H films with a high bulk density of 1830 kg/m3 at a high deposition rate of 81.1 nm/min.

元の言語英語
ページ(範囲)891-898
ページ数8
ジャーナルThin Solid Films
660
DOI
出版物ステータス出版済み - 8 30 2018

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

フィンガープリント The effect of the H<sub>2</sub>/(H<sub>2</sub> + Ar) flow-rate ratio on hydrogenated amorphous carbon films grown using Ar/H<sub>2</sub>/C<sub>7</sub>H<sub>8</sub> plasma chemical vapor deposition' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

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