The effects of substrate temperature and laser wavelength on the formation of carbon thin films by pulsed laser deposition

Tsuyoshi Yoshitake, Takashi Nishiyama, Hajime Aoki, Koji Suizu, Koji Takahashi, Kunihito Nagayama

研究成果: ジャーナルへの寄稿記事

22 引用 (Scopus)

抄録

Amorphous carbon films and diamond-like carbon films were grown by pulsed laser deposition (PLD) using different laser wavelengths (λ=193, 532 and 1064 nm) and substrate temperatures (ranging from room temperature to 500 °C). The morphology of the film surface was observed using atomic force microscopy (AFM) and scanning electron microscopy (SEM). The mechanisms of film growth using laser wavelengths of 1064, 532 and 193 nm are explained qualitatively to be surface growth, subsurface growth accompanied with migration of the penetrating species to the film surface, and subsurface growth, respectively, using the subplantation model.

元の言語英語
ページ(範囲)463-467
ページ数5
ジャーナルDiamond and Related Materials
8
発行部数2-5
出版物ステータス出版済み - 3 1 1999

Fingerprint

Carbon films
Pulsed laser deposition
Thin films
Wavelength
Lasers
Substrates
Diamond like carbon films
Amorphous carbon
Amorphous films
Film growth
Temperature
Atomic force microscopy
Scanning electron microscopy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

これを引用

The effects of substrate temperature and laser wavelength on the formation of carbon thin films by pulsed laser deposition. / Yoshitake, Tsuyoshi; Nishiyama, Takashi; Aoki, Hajime; Suizu, Koji; Takahashi, Koji; Nagayama, Kunihito.

:: Diamond and Related Materials, 巻 8, 番号 2-5, 01.03.1999, p. 463-467.

研究成果: ジャーナルへの寄稿記事

@article{899b254068ce49b3b2ec2e18b738c497,
title = "The effects of substrate temperature and laser wavelength on the formation of carbon thin films by pulsed laser deposition",
abstract = "Amorphous carbon films and diamond-like carbon films were grown by pulsed laser deposition (PLD) using different laser wavelengths (λ=193, 532 and 1064 nm) and substrate temperatures (ranging from room temperature to 500 °C). The morphology of the film surface was observed using atomic force microscopy (AFM) and scanning electron microscopy (SEM). The mechanisms of film growth using laser wavelengths of 1064, 532 and 193 nm are explained qualitatively to be surface growth, subsurface growth accompanied with migration of the penetrating species to the film surface, and subsurface growth, respectively, using the subplantation model.",
author = "Tsuyoshi Yoshitake and Takashi Nishiyama and Hajime Aoki and Koji Suizu and Koji Takahashi and Kunihito Nagayama",
year = "1999",
month = "3",
day = "1",
language = "English",
volume = "8",
pages = "463--467",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier BV",
number = "2-5",

}

TY - JOUR

T1 - The effects of substrate temperature and laser wavelength on the formation of carbon thin films by pulsed laser deposition

AU - Yoshitake, Tsuyoshi

AU - Nishiyama, Takashi

AU - Aoki, Hajime

AU - Suizu, Koji

AU - Takahashi, Koji

AU - Nagayama, Kunihito

PY - 1999/3/1

Y1 - 1999/3/1

N2 - Amorphous carbon films and diamond-like carbon films were grown by pulsed laser deposition (PLD) using different laser wavelengths (λ=193, 532 and 1064 nm) and substrate temperatures (ranging from room temperature to 500 °C). The morphology of the film surface was observed using atomic force microscopy (AFM) and scanning electron microscopy (SEM). The mechanisms of film growth using laser wavelengths of 1064, 532 and 193 nm are explained qualitatively to be surface growth, subsurface growth accompanied with migration of the penetrating species to the film surface, and subsurface growth, respectively, using the subplantation model.

AB - Amorphous carbon films and diamond-like carbon films were grown by pulsed laser deposition (PLD) using different laser wavelengths (λ=193, 532 and 1064 nm) and substrate temperatures (ranging from room temperature to 500 °C). The morphology of the film surface was observed using atomic force microscopy (AFM) and scanning electron microscopy (SEM). The mechanisms of film growth using laser wavelengths of 1064, 532 and 193 nm are explained qualitatively to be surface growth, subsurface growth accompanied with migration of the penetrating species to the film surface, and subsurface growth, respectively, using the subplantation model.

UR - http://www.scopus.com/inward/record.url?scp=0039776359&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0039776359&partnerID=8YFLogxK

M3 - Article

VL - 8

SP - 463

EP - 467

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

IS - 2-5

ER -