The evaluation of temporary degradation in quarter micron MOSFET by hydrogen passivation of Boron

This paper evaluates the outermost case of temporary MOSFET's characteristics degradation by hydrogen passivation of B (Boron) in low temperature process. A 1 μm p-MOSFET showed slight increase of drain resistance and about 40 % reduction of sheet resistance, experimentally. The simulation of 0.25 μm MOSFET's shows the channel length increase of more than 20 %, drain resistance increase about 40 %, as the results of 90 % passivation of dopant in lightly doped source and drain (LDD). To reduce the hydrogen passivation effects, the shortest LDD structure or heavily doped drain are required, and lower substrate impurity concentration must be chosen as far as possible to suppress the variation of threshold voltage. For the deep-submicron channel devices, however, it's difficult to make the sufficiently low resistive contact resistance.