The evaluation of temporary degradation in quarter micron MOSFET by hydrogen passivation of Boron

Engineering

• Passivation 50%
• Simulation 12%
• Reduction 12%
• Evaluation 12%
• Substrates 12%
• Characteristics 12%
• Lower Temperature 12%
• Electric Potential 12%
• Micron 12%
• Dopants 12%
• Resistive 12%
• Channel Length 12%
• Sheet Resistance 12%
• Channel Device 12%

Material Science

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Boron 50%
• Impurity 12%
• Doping (Additives) 12%
• Contact Resistance 12%