The impact of dopant contents on structures, morphologies and optical properties of Eu doped Ga2O3 films on GaAs substrate

Zhengwei Chen, Kazuo Nishihagi, Xu Wang, Congyu Hu, Makoto Arita, Katsuhiko Saito, Tooru Tanaka, Qixin Guo

    研究成果: ジャーナルへの寄稿学術誌査読

    17 被引用数 (Scopus)

    抄録

    We have fabricated the europium (Eu) doped Ga2O3 thin films on GaAs substrate by using pulsed laser deposition. The impact of Eu contents on structure, surface morphology, and optical properties are systematically investigated. We demonstrate that the Eu contents in Ga2O3 films can be controlled by adjusting the Eu contents in the targets. Moreover, all the films exhibited monoclinic Ga2O3 structure and smooth surface. We also clearly observe intense red emissions at 611 nm for the Eu doped Ga2O3 films. It is believed that this work paves the way for the development of GaAs-based red electroluminescence devices by using wide bandgap Ga2O3 as the host materials for Eu3+ ions.

    本文言語英語
    ページ(範囲)374-378
    ページ数5
    ジャーナルJournal of Luminescence
    194
    DOI
    出版ステータス出版済み - 2月 2018

    !!!All Science Journal Classification (ASJC) codes

    • 生物理学
    • 生化学
    • 化学 (全般)
    • 原子分子物理学および光学
    • 凝縮系物理学

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